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quality N Channel Enhancement Mode MOSFET HUAYI HYG012N03LR1TA with Low On Resistance and High Drain Current factory
quality N Channel Enhancement Mode MOSFET HUAYI HYG012N03LR1TA with Low On Resistance and High Drain Current factory

N Channel Enhancement Mode MOSFET HUAYI HYG012N03LR1TA with Low On Resistance and High Drain Current

Key Attributes
Model Number: HYG012N03LR1TA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
380A
Operating Temperature -:
-
RDS(on):
1.4mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
913pF
Input Capacitance(Ciss):
7.796nF
Output Capacitance(Coss):
1.16nF
Pd - Power Dissipation:
234W
Gate Charge(Qg):
175nC@10V
Mfr. Part #:
HYG012N03LR1TA
Package:
TOLL
Product Description

Product Overview

The HYG012N03LR1TA is a high-performance N-Channel Enhancement Mode MOSFET designed for switching applications. It features a low on-resistance of 0.7 m (typ.) at VGS = 10V and 1.0 m (typ.) at VGS = 4.5V, a high continuous drain current of 380A, and is 100% avalanche tested for reliability. This MOSFET is also available in Halogen Free and Green (RoHS Compliant) versions.

Product Attributes

  • Brand: HYG (Huayi Microelectronics)
  • Origin: China
  • Certifications: RoHS Compliant, Halogen Free, Green Devices Available

Technical Specifications

Part NumberVDSS (V)ID (A)RDS(ON) (m) @ VGS=10V (typ.)RDS(ON) (m) @ VGS=4.5V (typ.)Application
HYG012N03LR1TA303800.71.0Switching application

2411220407_HUAYI-HYG012N03LR1TA_C18222235.pdf

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