Pb free silicon bipolar RF transistor Infineon BFP405H6327XTSA1 with 1.25 dB noise figure at 1.8 GHz
Key Attributes
Model Number:
BFP405H6327XTSA1
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
1.5V
Pd - Power Dissipation:
75mW
Transition Frequency(fT):
25GHz
Type:
NPN
Current - Collector(Ic):
25mA
Collector - Emitter Voltage VCEO:
5V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BFP405H6327XTSA1
Package:
SOT-343-3D
Product Description
Product Overview
The BFP405 is a low-noise silicon bipolar RF transistor designed for low current applications and oscillators up to 12 GHz. It offers a minimum noise figure (NFmin) of 1.25 dB at 1.8 GHz and an outstanding power gain (Gms) of 23 dB at 1.8 GHz. This device comes in a Pb-free (RoHS compliant) and halogen-free package with visible leads and is AEC-Q101 qualified.
Product Attributes
- Brand: Infineon Technologies
- Package: SOT343
- Certifications: AEC-Q101
- Material: Silicon Bipolar
- Compliance: Pb-free (RoHS compliant), Halogen-free
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Maximum Ratings | ||||
| Collector-emitter voltage | VCEO | 4.5 | V | TA = 25 C |
| Collector-emitter voltage | VCEO | 4.1 | V | TA = -55 C |
| Collector-emitter voltage | VCES | 15 | V | |
| Collector-base voltage | VCBO | 15 | V | |
| Emitter-base voltage | VEBO | 1.5 | V | |
| Collector current | IC | 25 | mA | |
| Base current | IB | 3 | mA | |
| Total power dissipation | Ptot | 75 | mW | TS 110 C |
| Junction temperature | TJ | 150 | C | |
| Ambient temperature | TA | -65 ... 150 | C | |
| Storage temperature | TStg | -65 ... 150 | C | |
| Thermal Resistance | ||||
| Junction - soldering point | RthJS | 530 | K/W | |
| DC Characteristics | ||||
| Collector-emitter breakdown voltage | V(BR)CEO | 4.5 | V | IC = 1 mA, IB = 0 |
| Collector-emitter cutoff current | ICES | 10 | A | VCE = 15 V, VBE = 0 |
| Collector-base cutoff current | ICBO | 100 | nA | VCB = 5 V, IE = 0 |
| Emitter-base cutoff current | IEBO | 1 | A | VEB = 0.5 V, IC = 0 |
| DC current gain | hFE | 60 - 130 | - | IC = 5 mA, VCE = 4 V, pulse measured |
| AC Characteristics | ||||
| Transition frequency | fT | 18 - 25 | GHz | IC = 10 mA, VCE = 3 V, f = 2 GHz |
| Collector-base capacitance | Ccb | 0.05 - 0.1 | pF | VCB = 2 V, f = 1 MHz, VBE = 0, emitter grounded |
| Collector emitter capacitance | Cce | 0.24 | pF | VCE = 2 V, f = 1 MHz, VBE = 0, base grounded |
| Emitter-base capacitance | Ceb | 0.29 | pF | VEB = 0.5 V, f = 1 MHz, VCB = 0, collector grounded |
| Minimum noise figure | NFmin | 1.25 | dB | IC = 2 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt |
| Power gain, maximum stable | Gms | 23 | dB | IC = 5 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz |
| Insertion power gain | |S21| | 14 - 18.5 | dB | VCE = 2 V, IC = 5 mA, f = 1.8 GHz, ZS = ZL = 50 |
| Third order intercept point at output | IP3 | -15 | dBm | VCE = 2 V, IC = 5 mA, f = 1.8 GHz, ZS = ZL = 50 |
| 1dB compression point at output | P-1dB | -5 | dBm | IC = 5 mA, VCE = 2 V, ZS = ZL = 50 , f = 1.8 GHz |
2411220138_Infineon-BFP405H6327XTSA1_C3200369.pdf
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