N Channel Enhancement Mode MOSFET HUAYI HYG080N10LS1P 100V 90A Low On Resistance for Power Systems
Key Attributes
Model Number:
HYG080N10LS1P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+175℃
RDS(on):
11.2mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
43pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.09nF
Pd - Power Dissipation:
150W
Mfr. Part #:
HYG080N10LS1P
Package:
TO-220FB-3L
Product Description
Product Overview
The HYG080N10LS1P/B is an N-Channel Enhancement Mode MOSFET from Hymexa, designed for high-performance applications. It features a 100V/90A rating with low on-state resistance (RDS(ON) = 8m typ. @ VGS = 10V). This MOSFET is 100% avalanche tested, reliable, and rugged, with halogen-free (RoHS Compliant) options available. It is ideal for high-frequency point-of-load synchronous buck converters and networking DC-DC power systems.
Product Attributes
- Brand: Hymexa
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Certifications: RoHS Compliant, Halogen-Free Available
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C | - | - | 100 | V |
| Gate-Source Voltage | VGSS | Tc=25C | - | - | 20 | V |
| Maximum Junction Temperature | TJ | - | -55 | - | 175 | C |
| Storage Temperature Range | TSTG | - | -55 | - | 175 | C |
| Source Current-Continuous (Body Diode) | IS | Tc=25C | - | - | 90 | A |
| Pulsed Drain Current | IDM | Tc=25C | - | - | 360 | A |
| Continuous Drain Current | ID | Tc=25C | - | - | 90 | A |
| Continuous Drain Current | ID | Tc=100C | - | - | 64 | A |
| Maximum Power Dissipation | PD | Tc=25C | - | - | 150 | W |
| Maximum Power Dissipation | PD | Tc=100C | - | - | 75 | W |
| Thermal Resistance, Junction-to-Case | RJC | - | - | 1 | - | C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | Surface mounted on FR-4 board | - | 62 | - | C/W |
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH | - | 121.3 | - | mJ |
| Electrical Characteristics (Static) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=250A | 100 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=100V,VGS=0V | - | - | 1 | A |
| Drain-to-Source Leakage Current | IDSS | TJ=100C | - | - | 50 | A |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 1.0 | 2.2 | 3.0 | V |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=20A | - | 8 | 9.6 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V,IDS=20A | - | 11.2 | 15.0 | m |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD* | ISD=20A,VGS=0V | - | 0.86 | 1.3 | V |
| Reverse Recovery Time | trr | ISD=20A,dISD/dt=100A/s | - | 41.5 | - | ns |
| Reverse Recovery Charge | Qrr | - | - | 47.6 | - | nC |
| Electrical Characteristics (Dynamic) | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | - | 2.8 | - | |
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 2090 | - | pF |
| Output Capacitance | Coss | - | - | 763 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 43 | - | pF |
| Turn-on Delay Time | td(ON) | VDD=50V,RG=2.5, IDS=20A,VGS=10V | - | 10.2 | - | ns |
| Turn-on Rise Time | Tr | - | - | 29.5 | - | ns |
| Turn-off Delay Time | td(OFF) | - | - | 30.0 | - | ns |
| Turn-off Fall Time | Tf | - | - | 57.1 | - | ns |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg10V | VDS =80V, VGS=10V, ID=20A | - | 33.8 | - | nC |
| Total Gate Charge | Qg4.5V | - | - | 17.3 | - | nC |
| Gate-Source Charge | Qgs | - | - | 8.6 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 7.2 | - | nC |
2411220155_HUAYI-HYG080N10LS1P_C5121327.pdf
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