Rugged N Channel MOSFET HUAYI HY5204W Suitable for Inverter Systems and High Temperature Applications
Key Attributes
Model Number:
HY5204W
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
320A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.293nF
Number:
-
Output Capacitance(Coss):
2.036nF
Input Capacitance(Ciss):
8.655nF
Pd - Power Dissipation:
348W
Gate Charge(Qg):
231nC@10V
Mfr. Part #:
HY5204W
Package:
TO-247A-3L
Product Description
Product Overview
The HY5204W/A is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers avalanche rated, reliable, and rugged performance, making it suitable for demanding applications. This product is RoHS compliant, lead-free, and halogen-free.
Product Attributes
- Brand: HYNIX (implied by HY)
- Certifications: RoHS Compliant, Halogen Free, Green Device
- Material: Molding compounds, die attach material, and tin plating
Technical Specifications
| Symbol | Parameter | Rating | Unit | Test Conditions | Min | Typ | Max |
| Absolute Maximum Ratings | |||||||
| VDSS | Drain Source Voltage | 200 | V | VGS=0V | 200 | ||
| VGS | Gate Source Voltage | V | -20 | +20 | |||
| TJ | Maximum Junction Temperature | ℃ | 150 | ||||
| TSTG | Storage Temperature Range | ℃ | -55 | 150 | |||
| ID | Continuous Drain Current | A | TC=25℃, Mounted on Large Heat Sink | 100 | |||
| ID | Continuous Drain Current | A | TC=25℃ | 60 | |||
| IDM | Pulsed Drain Current | A | TC=25℃ | 200 | |||
| PD | Maximum Power Dissipation | W | TC=25℃ | 200 | |||
| RΘJ-C | Thermal Resistance Junction to Case | ℃/W | 0.5 | ||||
| RΘJ-A | Thermal Resistance Junction to Ambient | ℃/W | 40 | ||||
| EAS | Avalanche Energy Single Pulsed | mJ | L=1mH | 100 | |||
| Electrical Characteristics (TC=25℃ Unless Otherwise Noted) | |||||||
| BVDSS | Drain Source Breakdown Voltage | V | VGS=0V, IDS=1mA | 200 | |||
| IDSS | Zero Gate Voltage Drain Current | µA | VDS=200V, VGS=0V | 1 | |||
| VGS(th) | Gate Threshold Voltage | V | VDS=VGS, IDS=250µA | 2 | 2.5 | 3 | |
| IGSS | Gate Leakage Current | nA | VGS=±20V, VDS=0V | ±100 | |||
| RDS(ON) | Drain Source On State Resistance | mΩ | VGS=10V, IDS=60A | 4.0 | |||
| VSD | Diode Forward Voltage | V | ISD=60A, VGS=0V | 1.2 | |||
| trr | Reverse Recovery Time | ns | ISD=60A, dI/dt=100A/µs | 100 | |||
| Qrr | Reverse Recovery Charge | µC | ISD=60A, dI/dt=100A/µs | 120 | |||
| Dynamic Characteristics (TC=25℃ Unless Otherwise Noted) | |||||||
| RG | Gate Resistance | Ω | VGS=10V, VDS=50V, f=1MHz | 50 | |||
| Ciss | Input Capacitance | pF | VGS=0V, VDS=100V, f=1MHz | 2500 | |||
| Coss | Output Capacitance | pF | 500 | ||||
| Crss | Reverse Transfer Capacitance | pF | 300 | ||||
| td(on) | Turn on Delay Time | ns | VDD=100V, RG=10Ω, ID=60A, VGS=10V | 20 | |||
| tr | Turn on Rise Time | 30 | |||||
| td(off) | Turn off Delay Time | 100 | |||||
| tf | Turn off Fall Time | 80 | |||||
| Qg | Total Gate Charge | nC | VDS=100V, VGS=10V, IDS=60A | 180 | |||
| Qgs | Gate Source Charge | nC | 50 | ||||
| Qgd | Gate Drain Charge | nC | 60 | ||||
2410010003_HUAYI-HY5204W_C2833381.pdf
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