N Channel Enhancement Mode MOSFET HUAYI HY3712B with 125V Voltage Rating and 170A Continuous Current
Key Attributes
Model Number:
HY3712B
Product Custom Attributes
Drain To Source Voltage:
125V
Current - Continuous Drain(Id):
170A
RDS(on):
7.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
509pF
Number:
1 N-channel
Input Capacitance(Ciss):
8.162nF
Output Capacitance(Coss):
980pF
Pd - Power Dissipation:
339W
Gate Charge(Qg):
189nC@10V
Mfr. Part #:
HY3712B
Package:
TO-263-2L
Product Description
Product Overview
The HY3712 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a voltage rating of 125V and a continuous current of 170A, featuring a low on-state resistance of 6.3 m (typ.) at VGS=10V. This device is reliable, rugged, and available in lead-free and green (RoHS compliant) options.
Product Attributes
- Brand: HUAYI
- Origin: China
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
- Material: Molding compounds/die attach materials and 100% matte tin plate finish (for lead-free products)
Technical Specifications
| Model | Package Type | VDSS (V) | ID (A) | RDS(ON) (m) @ VGS=10V | VGS(th) (V) | EAS (mJ) | PD (W) |
| HY3712P/M/B/PS/PM | TO-220FB-3L | 125 | 170 (TC=25C) / 124 (TC=100C) | 6.3 (typ.) | 2.0 - 4.0 | 585** | 339 (TC=25C) / 170 (TC=100C) |
| HY3712P/M/B/PS/PM | TO-220FB-3S | 125 | 170 (TC=25C) / 124 (TC=100C) | 6.3 (typ.) | 2.0 - 4.0 | 585** | 339 (TC=25C) / 170 (TC=100C) |
| HY3712P/M/B/PS/PM | TO-263-2L | 125 | 170 (TC=25C) / 124 (TC=100C) | 6.3 (typ.) | 2.0 - 4.0 | 585** | 339 (TC=25C) / 170 (TC=100C) |
| HY3712P/M/B/PS/PM | TO-3PS-3L | 125 | 170 (TC=25C) / 124 (TC=100C) | 6.3 (typ.) | 2.0 - 4.0 | 585** | 339 (TC=25C) / 170 (TC=100C) |
| HY3712P/M/B/PS/PM | TO-3PM-3S | 125 | 170 (TC=25C) / 124 (TC=100C) | 6.3 (typ.) | 2.0 - 4.0 | 585** | 339 (TC=25C) / 170 (TC=100C) |
| Model | Capacitance (pF) Ciss | Capacitance (pF) Coss | Capacitance (pF) Crss | Gate Charge (nC) Qg | Gate Charge (nC) Qgs | Gate Charge (nC) Qgd |
| HY3712P/M/B/PS/PM | 8162 | 980 | 509 | 189 | 29 | 70 |
| Model | Switching Time (ns) td(ON) | Switching Time (ns) Tr | Switching Time (ns) td(OFF) | Switching Time (ns) Tf | Diode Forward Voltage (V) VSD @ ISD=85A | Reverse Recovery Time (ns) trr | Reverse Recovery Charge (nC) Qrr |
| HY3712P/M/B/PS/PM | 35 | 52 | 95 | 52 | 0.8 - 1.0 | 70 | 110 |
2410121713_HUAYI-HY3712B_C330371.pdf
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