High Voltage PNP Transistor Infineon BFN27E6327HTSA1 Suitable for TV Video Output and Power Supplies
Key Attributes
Model Number:
BFN27E6327HTSA1
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
20uA
Pd - Power Dissipation:
360mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
300V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BFN27E6327HTSA1
Package:
SOT-23
Product Description
BFN27 PNP Silicon High-Voltage Transistors
The BFN27 is a PNP silicon high-voltage transistor designed for video output stages in TV sets and switching power supplies. It offers a high breakdown voltage and a low collector-emitter saturation voltage. This transistor is Pb-free and RoHS compliant, qualified according to AEC Q101.
Product Attributes
- Brand: Infineon Technologies
- Complementary Type: BFN26 (NPN)
- Package: SOT23
- Certifications: AEC Q101 Qualified, Pb-free (RoHS compliant)
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Maximum Ratings | ||||
| Collector-emitter voltage | VCEO | 300 | V | |
| Collector-base voltage | VCBO | 300 | V | |
| Emitter-base voltage | VEBO | 5 | V | |
| Collector current | IC | 200 | mA | |
| Peak collector current, tp 10 ms | ICM | 500 | mA | |
| Base current | IB | 100 | mA | |
| Peak base current | IBM | 200 | mA | |
| Total power dissipation - TS 74 C | Ptot | 360 | mW | |
| Junction temperature | Tj | 150 | C | |
| Storage temperature | Tstg | -65 ... 150 | C | |
| Thermal Resistance | ||||
| Junction - soldering point1) | RthJS | 210 | K/W | 1)For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) |
| DC Characteristics | ||||
| Collector-emitter breakdown voltage | V(BR)CEO | 300 | V | IC = 1 mA, IB = 0 |
| Collector-base breakdown voltage | V(BR)CBO | 300 | V | IC = 100 A, IE = 0 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE = 100 A, IC = 0 |
| Collector-base cutoff current | ICBO | - | A | VCB = 250 V, IE = 0, TA = 150 C |
| Collector-base cutoff current | ICBO | 0.1 | A | VCB = 250 V, IE = 0, TA = 25 C |
| Collector-base cutoff current | ICBO | 20 | A | VCB = 250 V, IE = 0, TA = 150 C |
| Emitter-base cutoff current | IEBO | - | nA | VEB = 5 V, IC = 0 |
| Emitter-base cutoff current | IEBO | 100 | nA | VEB = 5 V, IC = 0 |
| DC current gain | hFE | 25 | - | IC = 1 mA, VCE = 10 V |
| DC current gain | hFE | 40 | - | IC = 10 mA, VCE = 10 V |
| DC current gain | hFE | 30 | - | IC = 30 mA, VCE = 10 V |
| Collector-emitter saturation voltage | VCEsat | - | V | IC = 20 mA, IB = 2 mA |
| Collector-emitter saturation voltage | VCEsat | 0.5 | V | IC = 20 mA, IB = 2 mA |
| Base emitter saturation voltage | VBEsat | - | V | IC = 20 mA, IB = 2 mA |
| Base emitter saturation voltage | VBEsat | 0.9 | V | IC = 20 mA, IB = 2 mA |
| AC Characteristics | ||||
| Transition frequency | fT | - | MHz | IC = 20 MHz, VCE = 10 V, f = 100 MHz |
| Transition frequency | fT | 100 | MHz | IC = 20 MHz, VCE = 10 V, f = 100 MHz |
| Collector-base capacitance | Ccb | - | pF | VCB = 30 V, f = 1 MHz |
| Collector-base capacitance | Ccb | 2.5 | pF | VCB = 30 V, f = 1 MHz |
2410121818_Infineon-BFN27E6327HTSA1_C7086505.pdf
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