N Channel Power MOSFET HUAYI HYG050N13NS1B 135V 200A Drain Current Low On Resistance Suitable for UPS
Key Attributes
Model Number:
HYG050N13NS1B
Product Custom Attributes
Drain To Source Voltage:
135V
Current - Continuous Drain(Id):
200A
RDS(on):
5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
176pF
Number:
-
Output Capacitance(Coss):
905pF
Input Capacitance(Ciss):
11.687nF
Pd - Power Dissipation:
375W
Gate Charge(Qg):
165nC@10V
Mfr. Part #:
HYG050N13NS1B
Package:
TO-263-2
Product Description
Product Overview
The HYG050N13NS1P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high voltage rating of 135V and a continuous drain current of 200A, with a low on-resistance of 4.0m (typ.) at VGS = 10V. This MOSFET is 100% avalanche tested, reliable, and rugged, with lead-free and green device options available (RoHS Compliant). It is suitable for use in Uninterruptible Power Supplies and other power switching applications.
Product Attributes
- Brand: HYG (Huayi Microelectronics)
- Origin: China
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 (MSL classification)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | - | - | 135 | V |
| Gate-Source Voltage | VGSS | - | - | 20 | - | V |
| Maximum Junction Temperature | TJ | - | - | - | 175 | C |
| Storage Temperature Range | TSTG | - | -55 | - | 175 | C |
| Source Current-Continuous (Body Diode) | IS | Tc=25C, Mounted on Large Heat Sink | - | - | 200 | A |
| Pulsed Drain Current | IDM | Tc=25C, *Repetitive ratingpulse width limited by max. junction temperature. | - | - | 690 | A |
| Continuous Drain Current | ID | Tc=25C | - | - | 200 | A |
| Continuous Drain Current | ID | Tc=100C | - | - | 141.4 | A |
| Maximum Power Dissipation | PD | Tc=25C | - | - | 375 | W |
| Maximum Power Dissipation | PD | Tc=100C | - | - | 187.5 | W |
| Thermal Resistance, Junction-to-Case | RJC | - | - | 0.40 | - | C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | ** Surface mounted on FR-4 board. | - | 62 | - | C/W |
| Single Pulsed-Avalanche Energy | EAS | *** Limited by TJmax , starting TJ=25C, L = 0.3mH, VDS=100V, VGS =10V. | - | 1050 | - | mJ |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=250A | 135 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=135V,VGS=0V | - | - | 1.0 | A |
| Drain-to-Source Leakage Current | IDSS | TJ=125C | - | - | 50 | A |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 2 | 3 | 4 | V |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=50A* | - | 4.0 | 5.0 | m |
| Diode Forward Voltage | VSD | ISD=50A,VGS=0V* | - | 0.83 | 1.3 | V |
| Reverse Recovery Time | trr | ISD=50A,dISD/dt=100A/s* | - | 93.8 | - | ns |
| Reverse Recovery Charge | Qrr | - | - | 262.6 | - | nC |
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1 MHz | - | 2.6 | - | |
| Input Capacitance | Ciss | VGS=0V, VDS=75V, Frequency=1.0MHz | - | 11687 | - | pF |
| Output Capacitance | Coss | - | - | 905 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 176 | - | pF |
| Turn-on Delay Time | td(ON) | VDD=75V,RG=4, IDS=50A,VGS=10V | - | 41.2 | - | ns |
| Turn-on Rise Time | Tr | - | - | 102.1 | - | ns |
| Turn-off Delay Time | td(OFF) | - | - | 107.5 | - | ns |
| Turn-off Fall Time | Tf | - | - | 102.5 | - | ns |
| Total Gate Charge | Qg | VDS=75V, VGS=10V ID=50A | - | 165 | - | nC |
| Gate-Source Charge | Qgs | - | - | 62 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 30 | - | nC |
| Note: *Pulse testpulse width 300usduty cycle 2% | ||||||
2409302230_HUAYI-HYG050N13NS1B_C2763413.pdf
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