Low On State Resistance N Channel MOSFET HYG013N04NA1P 40V 260A with RoHS Compliant Lead Free Device
Key Attributes
Model Number:
HYG013N04NA1P
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
260A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.05nF
Number:
1 N-channel
Output Capacitance(Coss):
1.502nF
Input Capacitance(Ciss):
11.62nF
Pd - Power Dissipation:
230W
Gate Charge(Qg):
265nC@10V
Mfr. Part #:
HYG013N04NA1P
Package:
TO-220FB
Product Description
Product Overview
The HYG013N04NA1P is an N-Channel Enhancement Mode MOSFET from Hymexa, designed for switching applications. It features a low on-state resistance of 1.3 m (typ.) at VGS = 10V, 40V/260A rating, and is 100% avalanche tested for reliability and ruggedness. Lead-free and green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: Hymexa
- Origin: China
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Model | Parameter | Test Conditions | Min | Typ. | Max | Unit |
| HYG013N04NA1P | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS= 250A | 40 | - | - | V |
| HYG013N04NA1P | Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS= 250A | 2 | 2.8 | 4 | V |
| HYG013N04NA1P | Drain-Source On-State Resistance (RDS(ON)) | VGS= 10V, IDS= 60A | - | 1.3 | 1.6 | m |
| HYG013N04NA1P | Continuous Drain Current (ID) | Tc=25C | - | 260 | - | A |
| HYG013N04NA1P | Continuous Drain Current (ID) | Tc=100C | - | 184 | - | A |
| HYG013N04NA1P | Maximum Power Dissipation (PD) | Tc=25C | - | 230 | - | W |
| HYG013N04NA1P | Maximum Power Dissipation (PD) | Tc=100C | - | 115 | - | W |
| HYG013N04NA1P | Thermal Resistance, Junction-to-Case (RJC) | - | - | 0.65 | - | C/W |
| HYG013N04NA1P | Input Capacitance (Ciss) | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 11620 | - | pF |
| HYG013N04NA1P | Output Capacitance (Coss) | - | - | 1502 | - | pF |
| HYG013N04NA1P | Reverse Transfer Capacitance (Crss) | - | - | 1050 | - | pF |
| HYG013N04NA1P | Total Gate Charge (Qg) | VDS = 32V, VGS= 10V, IDs= 60A | - | 265 | - | nC |
2411220256_HUAYI-HYG013N04NA1P_C2986714.pdf
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