High Current N Channel Enhancement Mode MOSFET HUAYI HYG016N04NR1B with Lead Free RoHS Compliant Package
Key Attributes
Model Number:
HYG016N04NR1B
Product Custom Attributes
Drain To Source Voltage:
45V
Current - Continuous Drain(Id):
240A
RDS(on):
1.4mΩ@10V,40A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.7V
Reverse Transfer Capacitance (Crss@Vds):
1nF
Number:
1 N-channel
Pd - Power Dissipation:
200W
Input Capacitance(Ciss):
6.06nF
Gate Charge(Qg):
153nC
Mfr. Part #:
HYG016N04NR1B
Package:
TO-263-2L
Product Description
Product Overview
The HYG016N04NR1/B is an N-Channel Enhancement Mode MOSFET designed for switching applications. It features a high continuous drain current of 240A and a low on-resistance of 1.4 m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green device options available (RoHS compliant). It is suitable for applications such as Li-battery protection.
Product Attributes
- Brand: HYM (Huayi Microelectronics Co., Ltd.)
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 compliant for MSL classification
Technical Specifications
| Parameter | Symbol | Test Conditions | Unit | Min | Typ. | Max |
| Absolute Maximum Ratings (Tc=25C Unless Otherwise Noted) | ||||||
| Drain-Source Voltage | VDSS | V | 45 | |||
| Gate-Source Voltage | VGSS | V | 25 | |||
| Junction Temperature Range | TJ | C | -55 | 175 | ||
| Storage Temperature Range | TSTG | C | -55 | 175 | ||
| Source Current-Continuous (Body Diode) | IS | Tc=25C, Mounted on Large Heat Sink | A | 240 | ||
| Pulsed Drain Current | IDM | Tc=25C | A | 760 | ||
| Continuous Drain Current | ID | Tc=25C | A | 240 | ||
| Continuous Drain Current | ID | Tc=100C | A | 170 | ||
| Maximum Power Dissipation | PD | Tc=25C | W | 200 | ||
| Maximum Power Dissipation | PD | Tc=100C | W | 100 | ||
| Thermal Resistance, Junction-to-Case | RJC | C/W | 0.75 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | Surface mounted on 1in FR-4 board | C/W | 62.5 | ||
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH, Limited by TJmax, starting TJ=25C, RG=25,VGS=10V | mJ | 870 | ||
| Electrical Characteristics (Tc =25C Unless Otherwise Noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS= 250A | V | 45 | - | - |
| Drain-to-Source Leakage Current | IDSS | VDS=45V,VGS=0V | A | - | 1 | |
| Drain-to-Source Leakage Current | IDSS | TJ=125C | A | - | 50 | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS= 250A | V | 2 | 2.7 | 4 |
| Gate-Source Leakage Current | IGSS | VGS=25V,VDS=0V | nA | - | 100 | |
| Drain-Source On-State Resistance | RDS(ON) | VGS= 10V,IDS= 40A | m | 1.4 | 1.8 | |
| Diode Forward Voltage | VSD | ISD=40A,VGS=0V | V | 0.8 | 1.0 | |
| Reverse Recovery Time | trr | ISD=20A,dISD/dt=100A/s | ns | 33 | - | |
| Reverse Recovery Charge | Qrr | nC | 35 | - | ||
| Electrical Characteristics (Cont.) (Tc =25C Unless Otherwise Noted) | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | 3.0 | - | ||
| Input Capacitance | Ciss | VGS=0V, VDS= 25V, Frequency=1.0MHz | pF | 6060 | - | |
| Output Capacitance | Coss | pF | 1130 | - | ||
| Reverse Transfer Capacitance | Crss | pF | 1000 | - | ||
| Turn-on Delay Time | td(ON) | VDD= 20V,RG=4, IDS=20A,VGS= 10V | ns | 16 | - | |
| Turn-on Rise Time | Tr | ns | 84 | - | ||
| Turn-off Delay Time | td(OFF) | ns | 112 | - | ||
| Turn-off Fall Time | Tf | ns | 128 | - | ||
| Gate Charge Characteristics (Pulse testpulse width 300usduty cycle 2%) | ||||||
| Total Gate Charge | Qg | VDS = 32V, VGS= 10V, IDs= 20A | nC | 153 | - | |
| Gate-Source Charge | Qgs | nC | 22 | - | ||
| Gate-Drain Charge | Qgd | nC | 74 | - | ||
2409302230_HUAYI-HYG016N04NR1B_C5121307.pdf
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