Power Management MOSFET HUAYI HYG023N04LS1D Single N Channel Enhancement Mode Device with Performance
Key Attributes
Model Number:
HYG023N04LS1D
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
45pF
Number:
1 N-channel
Output Capacitance(Coss):
809pF
Pd - Power Dissipation:
75W
Input Capacitance(Ciss):
4.032nF
Gate Charge(Qg):
58.7nC@10V
Mfr. Part #:
HYG023N04LS1D
Package:
TO-252-2L
Product Description
Product Overview
The HYG023N04LS1D is a single N-Channel Enhancement Mode MOSFET designed for power management applications. It offers high performance with a low on-state resistance of 2.0 m (typ.) at VGS = 10V and 2.8 m (typ.) at VGS = 4.5V. This MOSFET is 100% avalanche tested, reliable, and rugged, with halogen-free options available. It is suitable for DC/DC power management scenarios.
Product Attributes
- Brand: Hymexa
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Material: Halogen-Free Devices Available (RoHS compliant, Br/Cl < 900ppm, total Br+Cl < 1500ppm)
- Certifications: RoHS compliant, meets IPC/JEDEC J-STD-020 for MSL classification
Technical Specifications
| Parameter | Rating | Unit | Conditions |
| Drain-Source Voltage (VDSS) | 40 | V | VGS=0V |
| Gate-Source Voltage (VGSS) | ±20 | V | |
| Junction Temperature Range (TJ) | -55 to 175 | ||
| Storage Temperature Range (TSTG) | -55 to 175 | ||
| Source Current-Continuous (IS) | 120 | A | Tc=25, Mounted on Large Heat Sink |
| Pulsed Drain Current (IDM) | 570 | A | Tc=25, Pulse width limited by max.junction temperature |
| Continuous Drain Current (ID) | 120 | A | Tc=25 |
| Continuous Drain Current (ID) | 85 | A | Tc=100 |
| Maximum Power Dissipation (PD) | 75 | W | Tc=25 |
| Maximum Power Dissipation (PD) | 37.5 | W | Tc=100 |
| Thermal Resistance, Junction-to-Case (RJC) | 2.0 | /W | |
| Thermal Resistance, Junction-to-Ambient (RJA) | 60.0 | /W | Surface mounted on FR-4 board |
| Single Pulsed-Avalanche Energy (EAS) | 430 | mJ | L=0.3mH, Limited by TJmax, starting TJ=25, RG=25, VGS=10V |
| Drain-Source Breakdown Voltage (BVDSS) | 40 | V | VGS=0V, IDS=250A |
| Drain-to-Source Leakage Current (IDSS) | 1 | A | VDS=40V, VGS=0V, TJ=25 |
| Drain-to-Source Leakage Current (IDSS) | 50 | A | VDS=40V, VGS=0V, TJ=125 |
| Gate Threshold Voltage (VGS(th)) | 1.4 - 2.5 | V | VDS=VGS, IDS=250A (Min Typ Max) |
| Gate-Source Leakage Current (IGSS) | ±100 | nA | VGS=±20V, VDS=0V |
| Drain-Source On-State Resistance (RDS(ON)) | 2.0 - 2.6 | m | VGS=10V, IDS=40A (Typ Max) |
| Drain-Source On-State Resistance (RDS(ON)) | 2.8 - 3.5 | m | VGS=4.5V, IDS=40A (Typ Max) |
| Diode Forward Voltage (VSD) | 0.8 - 1.2 | V | ISD=40A, VGS=0V (Typ Max) |
| Reverse Recovery Time (trr) | 33.3 | ns | ISD=20A, dISD/dt=100A/s (Typ) |
| Reverse Recovery Charge (Qrr) | 29.5 | nC | ISD=20A, dISD/dt=100A/s (Typ) |
| Gate Resistance (RG) | 2 | VGS=0V, VDS=0V, F=1MHz (Typ) | |
| Input Capacitance (Ciss) | 4032 | pF | VGS=0V, VDS=25V, Frequency=500KHz (Typ) |
| Output Capacitance (Coss) | 809 | pF | VGS=0V, VDS=25V, Frequency=500KHz (Typ) |
| Reverse Transfer Capacitance (Crss) | 45 | pF | VGS=0V, VDS=25V, Frequency=500KHz (Typ) |
| Turn-on Delay Time (td(ON)) | 14 | ns | VDD=20V, RG=4, IDS=20A, VGS=10V (Typ) |
| Turn-on Rise Time (Tr) | 49 | ns | VDD=20V, RG=4, IDS=20A, VGS=10V (Typ) |
| Turn-off Delay Time (td(OFF)) | 42 | ns | VDD=20V, RG=4, IDS=20A, VGS=10V (Typ) |
| Turn-off Fall Time (Tf) | 43 | ns | VDD=20V, RG=4, IDS=20A, VGS=10V (Typ) |
| Total Gate Charge (Qg) | 58.7 | nC | VDS =32V, VGS=10V, ID=20A (Typ) |
| Total Gate Charge (Qg) | 27.4 | nC | VDS =32V, VGS=4.5V, ID=20A (Typ) |
| Gate-Source Charge (Qgs) | 15.1 | nC | VDS =32V, VGS=4.5V, ID=20A (Typ) |
| Gate-Drain Charge (Qgd) | 9.3 | nC | VDS =32V, VGS=4.5V, ID=20A (Typ) |
2410122027_HUAYI-HYG023N04LS1D_C2931344.pdf
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