Low noise broadband bipolar RF transistor Infineon BFP843H6327 robust pre matched for high frequency
Key Attributes
Model Number:
BFP843H6327
Product Custom Attributes
Current - Collector Cutoff:
400nA
Pd - Power Dissipation:
125mW
Transition Frequency(fT):
-
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
55mA
Collector - Emitter Voltage VCEO:
2.25V
Operating Temperature:
-
Mfr. Part #:
BFP843H6327
Package:
SOT-343-4
Product Description
Product Overview
The BFP843 is a robust, low-noise, broadband, pre-matched bipolar RF transistor designed for demanding RF applications. It offers excellent performance characteristics suitable for various high-frequency circuits.
Product Attributes
- Brand: Infineon Technologies
- Product Name: BFP843
- Product Type: Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor
- Package: SOT343
- Origin: Germany
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Collector-Emitter Voltage | VCEO | 5 | V | TA = 25 C | ||
| Collector-Base Voltage | VCBO | 15 | V | TA = 25 C | ||
| Emitter-Base Voltage | VEBO | 2 | V | TA = 25 C | ||
| Collector Current | IC | 50 | mA | TA = 25 C | ||
| Total Power Dissipation | Ptot | 300 | mW | TA = 25 C | ||
| Thermal Characteristics | ||||||
| Thermal Resistance Junction to Ambient | RthJA | 333 | K/W | SOT343 | ||
| DC Characteristics | ||||||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.3 | 0.5 | V | IC = 20 mA, IB = 1 mA, TA = 25 C | |
| DC Current Gain | hFE | 30 | VCE = 1.8 V, IC = 15 mA, TA = 25 C | |||
| Base-Emitter Saturation Voltage | VBE(sat) | 0.7 | 0.9 | V | IC = 20 mA, IB = 1 mA, TA = 25 C | |
| General AC Characteristics | ||||||
| Current Gain - Bandwidth Product | fT | 12 | GHz | VCE = 1.8 V, IC = 15 mA, TA = 25 C | ||
| Collector-Emitter Breakdown Voltage | VCEO(sus) | 5 | V | IC = 1 mA, TA = 25 C | ||
| Noise Figure (5.5 GHz) | NF | 0.8 | 1.2 | dB | VCE = 1.8 V, IC = 8 mA, ZS = Zopt | |
| Noise Figure (5.5 GHz) | NF | 1.0 | 1.5 | dB | VCE = 1.8 V, IC = 15 mA, ZS = Zopt | |
| Maximum Available Gain (5.5 GHz) | MAG | 16 | dB | VCE = 1.8 V, IC = 15 mA | ||
| 3rd Order Intercept Point (Output) | OIP3 | 35 | dBm | VCE = 1.8 V, IC = 15 mA, ZS = ZL = 50 , f = 5.5 GHz | ||
| 1 dB Compression Point (Output) | OP1dB | 17 | dBm | VCE = 1.8 V, IC = 15 mA, ZS = ZL = 50 , f = 5.5 GHz | ||
2412111203_Infineon-BFP843H6327_C3199253.pdf
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