Power switching MOSFET HUAYI HY3410NA2P N Channel type with 140A drain current and lead free package
Key Attributes
Model Number:
HY3410NA2P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
140A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
294pF
Number:
1 N-channel
Output Capacitance(Coss):
426pF
Input Capacitance(Ciss):
6.835nF
Pd - Power Dissipation:
288W
Gate Charge(Qg):
133nC@10V
Mfr. Part #:
HY3410NA2P
Package:
TO-220FB-3
Product Description
Product Overview
The HY3410NA2P is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high voltage rating of 100V and a continuous drain current of 140A, with a low on-state resistance of 5.7m (typ.) at VGS = 10V. This MOSFET is 100% avalanche tested, reliable, and rugged, with lead-free and green device options available. It is suitable for use in Uninterruptible Power Supplies and Motor Control systems.
Product Attributes
- Brand: HUAYI
- Part Number: HY3410NA2P
- Package: TO-220FB-3L
- Certifications: RoHS Compliant, Green Devices Available
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
Technical Specifications
| Parameter | Test Conditions | HY3410NA2 Unit | Min | Typ. | Max |
| Absolute Maximum Ratings | |||||
| VDSS Drain-Source Voltage | Tc=25C Unless Otherwise Noted | V | - | - | 100 |
| VGSS Gate-Source Voltage | V | - | - | ±20 | |
| TJ Maximum Junction Temperature | °C | -55 | - | 175 | |
| TSTG Storage Temperature Range | °C | -55 | - | 175 | |
| ID Continuous Drain Current | Tc=25°C | A | - | 140 | - |
| ID Continuous Drain Current | Tc=100°C | A | - | 99 | - |
| IDM Pulsed Drain Current | Tc=25°C | A | - | 410 | - |
| PD Maximum Power Dissipation | Tc=25°C | W | - | 288 | - |
| PD Maximum Power Dissipation | Tc=100°C | W | - | 144 | - |
| RθJC Thermal Resistance, Junction-to-Case | °C/W | - | 0.52 | - | |
| RθJA Thermal Resistance, Junction-to-Ambient | Surface mounted on FR-4 board. | °C/W | - | 62 | - |
| EAS Single Pulsed-Avalanche Energy | L=0.3mH | mJ | - | 508.8 | - |
| Electrical Characteristics | |||||
| BVDSS Drain-Source Breakdown Voltage | VGS=0V,IDS=250μA | V | 100 | - | - |
| IDSS Drain-to-Source Leakage Current | VDS=100V,VGS=0V | μA | - | - | 1.0 |
| IDSS Drain-to-Source Leakage Current | TJ=125°C | μA | - | - | 50 |
| VGS(th) Gate Threshold Voltage | VDS=VGS, IDS=250μA | V | 2 | 3 | 4 |
| IGSS Gate-Source Leakage Current | VGS=±20V,VDS=0V | nA | - | - | ±100 |
| RDS(ON)* Drain-Source On-State Resistance | VGS=10V,IDS=50A | mΩ | - | 5.7 | 7 |
| VSD* Diode Forward Voltage | ISD=50A,VGS=0V | V | - | 0.86 | 1.3 |
| trr Reverse Recovery Time | ISD=50A,dISD/dt=100A/μs | ns | - | 41.2 | - |
| Qrr Reverse Recovery Charge | nC | - | 75 | - | |
| RG Gate Resistance | VGS=0V,VDS=0V,F=1MHz | Ω | - | 1.5 | - |
| Ciss Input Capacitance | VGS=0V, VDS=50V, Frequency=1.0MHz | pF | - | 6835 | - |
| Coss Output Capacitance | pF | - | 426 | - | |
| Crss Reverse Transfer Capacitance | pF | - | 294 | - | |
| td(ON) Turn-on Delay Time | VDD=50V,RG=4Ω, IDS=50A,VGS=10V | ns | - | 28.1 | - |
| Tr Turn-on Rise Time | ns | - | 98.2 | - | |
| td(OFF) Turn-off Delay Time | ns | - | 75.5 | - | |
| Tf Turn-off Fall Time | ns | - | 101.9 | - | |
| Qg Total Gate Charge | VDS=50V, VGS=10V, ID=50A | nC | - | 133 | - |
| Qgs Gate-Source Charge | nC | - | 40 | - | |
| Qgd Gate-Drain Charge | nC | - | 40 | - | |
2411220115_HUAYI-HY3410NA2P_C2687413.pdf
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