Silicon PNP Transistor Array Infineon BC856SH6327XTSA1 Designed for AF Input and Driver Applications
Key Attributes
Model Number:
BC856SH6327XTSA1
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
250MHz
Type:
PNP
Number:
2 PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BC856SH6327XTSA1
Package:
SOT-363-6
Product Description
Product Overview
The BC856S/U and BC857S are PNP Silicon AF Transistor Arrays designed for AF input stages and driver applications. They offer high current gain, low collector-emitter saturation voltage, and feature two internally isolated transistors with good matching in a single package. These devices are Pb-free (RoHS compliant) and qualified according to AEC Q101.
Product Attributes
- Brand: Infineon Technologies
- Material: Silicon
- Certifications: AEC Q101, Pb-free (RoHS compliant)
Technical Specifications
| Type | Marking | Package | VCEO (V) | VCBO (V) | VEBO (V) | IC (mA) | ICM (mA) | Ptot (mW) @ TS | Tj (C) | Tstg (C) | RthJS (K/W) | V(BR)CEO (V) | V(BR)CBO (V) | V(BR)EBO (V) | ICBO (A) | hFE | VCEsat (mV) | VBEsat (mV) | VBE(ON) (mV) | fT (MHz) | Ccb (pF) | Ceb (pF) | h11e (k) | h12e | h21e | h22e (S) | F (dB) |
| BC856S | 3Ds | SOT363 | 65 | 80 | 5 | 100 | 200 | 250 @ 115C | 150 | -65 ... 150 | 140 | 65 | 80 | 5 | 0.015 (at 150C) | 250-630 | 75-300 | 700-850 | 600-820 | 250 | 1.5 | 8 | 4.5 | 2 x 10-4 | 330 | 30 | 10 |
| BC856U | 3Ds | SOT363 | 65 | 80 | 5 | 100 | 200 | 250 @ 118C | 150 | -65 ... 150 | 130 | 65 | 80 | 5 | 0.015 (at 150C) | 250-630 | 75-300 | 700-850 | 600-820 | 250 | 1.5 | 8 | 4.5 | 2 x 10-4 | 330 | 30 | 10 |
| BC857S | 3Cs | SOT363 | 45 | 50 | 5 | 100 | 200 | 250 @ 118C | 150 | -65 ... 150 | 140 | 45 | 50 | 5 | 0.015 (at 150C) | 200-290 | 250-650 | 700-850 | 650-750 | 250 | 1.5 | 8 | 4.5 | 2 x 10-4 | 330 | 30 | 10 |
2410121720_Infineon-BC856SH6327XTSA1_C672290.pdf
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