Low On Resistance N Channel MOSFET Model HYG024N03LR1C2 Suitable for Battery Protection Circuits
Key Attributes
Model Number:
HYG024N03LR1C2
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
140A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2.3mΩ@4.5V,30A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
458pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
71.4W
Input Capacitance(Ciss):
3.936nF
Gate Charge(Qg):
88.1nC@10V
Mfr. Part #:
HYG024N03LR1C2
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The HYG024N03LR1C2 is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-resistance (RDS(ON)) at various gate-source voltages, 100% avalanche tested, and a reliable, rugged design. Halogen-free devices are available, ensuring RoHS compliance. This MOSFET is suitable for battery protection and power tool applications.
Product Attributes
- Brand: Hymexa
- Origin: China
- Material: Lead-free (RoHS Compliant), Halogen-free
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 compliant for MSL classification
Technical Specifications
| Model | Feature | Parameter | Value | Unit |
| HYG024N03LR1C2 | Absolute Maximum Ratings | Drain-Source Voltage (VDSS) | 30 | V |
| Gate-Source Voltage (VGSS) | ±20 | V | ||
| Maximum Junction Temperature (TJ) | -55 to 175 | °C | ||
| Electrical Characteristics | Drain-Source On-State Resistance (RDS(ON)) @ VGS=10V | 1.6 (typ.) | mΩ | |
| Drain-Source On-State Resistance (RDS(ON)) @ VGS=4.5V | 2.3 (typ.) | mΩ | ||
| HYG024N03LR1 | Electrical Characteristics | Drain-Source Breakdown Voltage (BVDSS) | 30 | V |
| Gate Threshold Voltage (VGS(th)) | 1.0 - 3.0 | V | ||
| Diode Forward Voltage (VSD) @ ISD=30A | - 0.78 - 1.3 | V |
2411220138_HUAYI-HYG024N03LR1C2_C5121295.pdf
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