Single N Channel Enhancement Mode MOSFET HUAYI HYG020N06LS1P with Lead Free and Halogen Free Package
Key Attributes
Model Number:
HYG020N06LS1P
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
210A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
37pF
Number:
1 N-channel
Pd - Power Dissipation:
230W
Input Capacitance(Ciss):
7.236nF
Gate Charge(Qg):
112nC@10V
Mfr. Part #:
HYG020N06LS1P
Package:
TO-220FB-3L
Product Description
Product Overview
The HYG020N06LS1P is a single N-Channel Enhancement Mode MOSFET from Hymexa, designed for high-performance applications. It features a low on-resistance (RDS(ON)=2m typ. @ VGS = 10V), 100% avalanche tested, and offers a reliable and rugged design. This device is available in lead-free (RoHS compliant) and green (lead-free and halogen-free) options.
Product Attributes
- Brand: Hymexa
- Package Type: TO-220FB-3L
- Certifications: RoHS Compliant, Green (lead-free and halogen-free)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | 60 | V | ||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Maximum Junction Temperature | TJ | -55 | 175 | C | ||
| Storage Temperature Range | TSTG | -55 | 175 | C | ||
| Source Current-Continuous(Body Diode) | IS | Tc=25C, Mounted on Large Heat Sink | 210 | A | ||
| Pulsed Drain Current | IDM | Tc=25C | 820 | A | ||
| Continuous Drain Current | ID | Tc=25C | 210 | A | ||
| Continuous Drain Current | ID | Tc=100C | 94 | A | ||
| Maximum Power Dissipation | PD | Tc=25C | 230 | W | ||
| Maximum Power Dissipation | PD | Tc=100C | 115 | W | ||
| Thermal Resistance, Junction-to-Case | RJC | 0.65 | C/W | |||
| Thermal Resistance, Junction-to-Ambient | RJA | Surface mounted on FR-4 board. | 62.5 | C/W | ||
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH, Limited by TJmax, starting TJ=25C, VDS=48V., VGS=10V. | 795 | mJ | ||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=250A | 60 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=60V,VGS=0V | - | 1 | A | |
| Drain-to-Source Leakage Current | IDSS | TJ=100C | - | 50 | A | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 1 | 2.1 | 3 | V |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | - | 100 | nA | |
| Drain-Source On-State Resistance | RDS(ON)* | VGS=10V,IDS=50A | 2 | 2.5 | m | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD* | ISD=50A,VGS=0V | 0.84 | 1.3 | V | |
| Reverse Recovery Time | trr | ISD=50A,dISD/dt=100A/s | 53.6 | - | ns | |
| Reverse Recovery Charge | Qrr | 77.6 | - | nC | ||
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | 0.6 | - | ||
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1MHz | 7236 | - | pF | |
| Output Capacitance | Coss | VGS=0V, VDS=25V, Frequency=1MHz | 1736 | - | pF | |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, Frequency=1MHz | 37 | - | pF | |
| Turn-on Delay Time | td(ON) | VDD=30V,RG=2.5, IDS=50A,VGS=10V | 19.8 | - | ns | |
| Turn-on Rise Time | Tr | VDD=30V,RG=2.5, IDS=50A,VGS=10V | 68.7 | - | ns | |
| Turn-off Delay Time | td(OFF) | VDD=30V,RG=2.5, IDS=50A,VGS=10V | 55.6 | - | ns | |
| Turn-off Fall Time | Tf | VDD=30V,RG=2.5, IDS=50A,VGS=10V | 86 | - | ns | |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg10V | VDS =48V, VGS=10V, ID=50A | 112 | - | nC | |
| Gate-Source Charge | Qgs | VDS =48V, VGS=10V, ID=50A | 30 | - | nC | |
| Gate-Drain Charge | Qgd | VDS =48V, VGS=10V, ID=50A | 19 | - | nC | |
2410121306_HUAYI-HYG020N06LS1P_C3025197.pdf
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