Low On Resistance MOSFET HUAYI HY1210D with 100V 26A Rating and Halogen Free RoHS Compliant Material
Key Attributes
Model Number:
HY1210D
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
26A
Operating Temperature -:
-55℃~+150℃
RDS(on):
36mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.8pF
Number:
1 N-channel
Output Capacitance(Coss):
38pF
Input Capacitance(Ciss):
2.543nF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
72nC@10V
Mfr. Part #:
HY1210D
Package:
TO-252-2L
Product Description
Product Overview
The HY1210D/U/V is a N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a 100V/26A rating, low on-resistance (RDS(ON) = 32m typ. @VGS = 10V), and 100% avalanche tested for reliability and ruggedness. Available in TO-252-2L, TO-251-3L, and TO-251-3S packages, it is also offered in Halogen Free and Green (RoHS Compliant) versions.
Product Attributes
- Brand: HY1210D/U/V (Huayi Microelectronics)
- Material: Halogen Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020
Technical Specifications
| Model | Rating | RDS(ON) (typ.)@VGS=10V | RDS(ON) (typ.)@VGS=4.5V | Avalanche Tested | Package |
| HY1210D/U/V | 100V/26A | 32m | 34m | 100% | TO-252-2L, TO-251-3L, TO-251-3S |
| Symbol | Parameter | Test Conditions | Rating | Unit |
| ID | Continuous Drain Current | Tc=25C | 26 | A |
| Tc=100C | 17 | A | ||
| Mounted on Large Heat Sink | 26 | A | ||
| IDM | Pulsed Drain Current | Tc=25C | 100 | A |
| PD | Maximum Power Dissipation | Tc=25C | 50 | W |
| PD | Maximum Power Dissipation | Tc=100C | 20 | W |
| RJC | Thermal Resistance, Junction-to-Case | 2.5 | C/W | |
| RJA | Thermal Resistance, Junction-to-Ambient | Surface mounted on a square inches Cu board | 110 | C/W |
| EAS | Single Pulsed-Avalanche Energy | L=0.3mH, starting TJ=25C, VD= 80V,VGS=10V | 108 | mJ |
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,IDS=250uA | 100 | - | - | V |
| IDSS | Drain-to-Source Leakage Current | VDS=100V, VGS=0V | - | - | 1 | uA |
| TJ=85C | - | - | 30 | uA | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250uA | 1.0 | 2.0 | 3.0 | V |
| IGSS | Gate-Source Leakage Current | VGS=20V,VDS=0V | - | - | 100 | nA |
| RDS(ON) | Drain-Source On-state Resistance | VGS=10V,IDS=10A | - | 32 | 36 | m |
| VGS=4.5V,IDS=10A | - | 34 | 38 | m | ||
| VSD | Diode Forward Voltage | ISD=10A,VGS=0V | - | 0.8 | 1.3 | V |
| trr | Reverse Recovery Time | ISD=13A,dISD/dt=100A/us | - | 21 | - | ns |
| Qrr | Reverse Recovery Charge | - | 52 | - | nC | |
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1 MHz | - | 1.7 | - | |
| Ciss | Input Capacitance | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 2543 | - | pF |
| Coss | Output Capacitance | - | 38 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 5.8 | - | pF | |
| td(ON) | Turn-on Delay Time | VDD=50V,RG=3, IDS=13A,VGS=10V | - | 11 | - | ns |
| Tr | Turn-on Rise Time | - | 8 | - | ns | |
| td(OFF) | Turn-off Delay Time | - | 24 | - | ns | |
| Tf | Turn-off Fall Time | - | 13 | - | ns | |
| Qg | Total Gate Charge | VDS =80V, VGS=10V ID=13A | - | 72 | - | nC |
| Qgs | Gate-Source Charge | - | 8 | - | nC | |
| Qgd | Gate-Drain Charge | - | 14 | - | nC |
2409302230_HUAYI-HY1210D_C358118.pdf
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