Load Switching P Channel MOSFET HYG161P10LA1S with 135 Milliohm On Resistance and Avalanche Tested
Key Attributes
Model Number:
HYG161P10LA1S
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
6A
RDS(on):
200mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
36pF@25V
Number:
1 P-Channel
Pd - Power Dissipation:
5.4W
Input Capacitance(Ciss):
1.376nF
Gate Charge(Qg):
24nC@10V
Mfr. Part #:
HYG161P10LA1S
Package:
SOP-8
Product Description
Product Overview
The HYG161P10LA1S is a P-Channel Enhancement Mode MOSFET from Huayi Microelectronics, designed for power management and load switching applications. It features a -100V/-6A rating, low on-resistance of 135 m (typ.) at VGS = -10V, and 100% avalanche tested for reliability. Halogen-free and RoHS compliant devices are available.
Product Attributes
- Brand: HYM (Huayi Microelectronics)
- Origin: China
- Certifications: RoHS Compliant, Halogen-Free
- Package Type: SOP-8L
Technical Specifications
| Parameter | Test Conditions | HYG161P10LA1S | Unit |
| Absolute Maximum Ratings | |||
| Drain-Source Voltage (VDSS) | -100 | V | |
| Gate-Source Voltage (VGSS) | ±20 | V | |
| Continuous Drain Current (ID) | Tc=25°C | -6 | A |
| Continuous Drain Current (ID) | Tc=100°C | -3.8 | A |
| Pulsed Drain Current (IDM) | Tc=25°C | -24 | A |
| Maximum Power Dissipation (PD) | Tc=25°C | 5.4 | W |
| Maximum Power Dissipation (PD) | Tc=100°C | 2.1 | W |
| Junction Temperature Range (TJ) | -55 to 150 | °C | |
| Storage Temperature Range (TSTG) | -55 to 150 | °C | |
| Thermal Resistance-Junction to Lead (RθJC) | 23 | °C/W | |
| Thermal Resistance-Junction to Ambient (RθJA) | ** | 40 | °C/W |
| Single Pulsed-Avalanche Energy (EAS) | *** | 87.9 | mJ |
| Electrical Characteristics | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=-250μA | -100 | V |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=-250μA | -1.0 to -3.0 | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=-100V, VGS=0V | -1 | μA |
| Drain-to-Source Leakage Current (IDSS) | TJ=100°C | -50 | μA |
| Gate-Source Leakage Current (IGSS) | VGS=±20V, VDS=0V | -100 | nA |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=-10V, IDS=-3A | 135 (typ.) | mΩ |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=-4.5V, IDS=-2A | 145 (typ.) | mΩ |
| Transconductance (gfs) | VDS=-10V, ID=-3A | 9.7 | S |
| Diode Forward Voltage (VSD) | ISD=-3A, VGS=0V | -0.8 to -1.3 | V |
| Dynamic Characteristics | |||
| Input Capacitance (Ciss) | VGS=0V, VDS=-25V, Frequency=1.0MHz | 1376 | pF |
| Output Capacitance (Coss) | 59 | pF | |
| Reverse Transfer Capacitance (Crss) | 36 | pF | |
| Turn-on Delay Time (td(ON)) | VDD=-50V,RG=2.5Ω, IDS=-3A,VGS=-10V | 7.2 | ns |
| Turn-on Rise Time (Tr) | 10 | ns | |
| Turn-off Delay Time (td(OFF)) | 51.6 | ns | |
| Turn-off Fall Time (Tf) | 33.5 | ns | |
| Gate Charge Characteristics | |||
| Total Gate Charge (Qg) | VDS =-80V, VGS=-10V, ID=-3A | 24 | nC |
| Total Gate Charge (Qg(-4.5V)) | 11 | nC | |
| Gate-Source Charge (Qgs) | 4.9 | nC | |
| Gate-Drain Charge (Qgd) | 4.6 | nC | |
2409302230_HUAYI-HYG161P10LA1S_C2986721.pdf
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