NPN Silicon RF Transistor for Broadband Amplifiers Infineon BFS17SH6327 Collector Current 1 to 20 mA
Key Attributes
Model Number:
BFS17SH6327
Product Custom Attributes
Emitter-Base Voltage(Vebo):
2.5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
280mW
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
25mA
Collector - Emitter Voltage VCEO:
15V
Mfr. Part #:
BFS17SH6327
Package:
SOT-363
Product Description
Product Overview
The BFS17S is a NPN Silicon RF Transistor designed for broadband amplifiers up to 1 GHz. It is suitable for collector currents ranging from 1 mA to 20 mA. This Pb-free (RoHS compliant) package is ESD sensitive and requires careful handling.
Product Attributes
- Brand: Infineon Technologies
- Certifications: Pb-free (RoHS compliant)
- Package Type: SOT363
- ESD Sensitive: Yes
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Maximum Ratings | ||||
| Collector-emitter voltage | VCEO | 15 | V | |
| Collector-base voltage | VCBO | 25 | V | |
| Emitter-base voltage | VEBO | 2.5 | V | |
| Collector current | IC | 25 | mA | |
| Peak collector current, f = 10 MHz | ICM | 50 | mA | |
| Total power dissipation | Ptot | 280 | mW | TS 93 C |
| Junction temperature | TJ | 150 | C | |
| Ambient temperature | TA | -65 ... 150 | C | |
| Storage temperature | TStg | -65 ... 150 | C | |
| Thermal Resistance | ||||
| Junction - soldering point | RthJS | 240 | K/W | TS is measured on the collector lead at the soldering point to the pcb |
| DC Characteristics | ||||
| Collector-emitter breakdown voltage | V(BR)CEO | 15 | V | IC = 1 mA, IB = 0 |
| Collector-base cutoff current | ICBO | - | A | VCB = 25 V, IE = 0 |
| Emitter-base cutoff current | IEBO | - | A | VEB = 2.5 V, IC = 0 |
| DC current gain | hFE | 40 | - | IC = 2 mA, VCE = 1 V, pulse measured |
| DC current gain | hFE | 70 | - | IC = 25 mA, VCE = 1 V, pulse measured |
| Collector-emitter saturation voltage | VCEsat | 0.4 | V | IC = 25 mA, IB = 1 mA |
| AC Characteristics | ||||
| Transition frequency | fT | 1.3 | GHz | IC = 2 mA, VCE = 5 V, f = 200 MHz |
| Transition frequency | fT | 2.5 | GHz | IC = 25 mA, VCE = 5 V, f = 200 MHz |
| Collector-base capacitance | Ccb | 0.8 | pF | VCB = 5 V, f = 1 MHz, VBE = 0 , emitter grounded |
| Collector emitter capacitance | Cce | 0.2 | - | VCE = 5 V, f = 1 MHz, VBE = 0 , base grounded |
| Emitter-base capacitance | Ceb | 1.45 | pF | VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded |
| Minimum noise figure | NFmin | 5 | dB | IC = 2 mA, VCE = 5 V, ZS = 50 , f = 800 MHz |
| Transducer gain | |S21e| | 14 | dB | IC = 20 mA, VCE = 5 V, ZS = ZL = 50, f = 500 MHz |
| Third order intercept point at output | IP3 | -22.5 | dBm | VCE = 5 V, IC = 20 mA, f = 800 MHz, ZS = ZSopt, ZL = ZLopt |
| 1dB compression point | P-1dB | -11 | - | IC = 20 mA, VCE = 5 V, ZS = ZL = 50, f = 800 MHz |
2412201924_Infineon-BFS17SH6327_C18203082.pdf
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