Silicon npn rf bipolar transistor Infineon BFR360FH6327XTSA1 offering high gain and low noise for rf
Key Attributes
Model Number:
BFR360FH6327XTSA1
Product Custom Attributes
Emitter-Base Voltage(Vebo):
2V
Current - Collector Cutoff:
30nA
Pd - Power Dissipation:
210mW
Transition Frequency(fT):
14GHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
35mA
Collector - Emitter Voltage VCEO:
6V
Mfr. Part #:
BFR360FH6327XTSA1
Package:
TSFP-4-1
Product Description
Product Overview
The BFR360F is a low-noise, low-current, and low-voltage silicon NPN RF bipolar transistor from Infineon's third-generation RF bipolar transistor family. It is designed for low current amplifiers and offers cost competitiveness with ease of use. Its key features include a minimum noise figure of 1 dB at 1.8 GHz, high gain, and a high OIP3, making it suitable for applications like LNAs for FM/AM radio and sub-1 GHz ISM band applications.
Product Attributes
- Brand: Infineon
- Material: Silicon
- Certifications: Qualified for industrial applications according to JEDEC47/20/22
Technical Specifications
| Parameter | Symbol | Values | Unit | Note or test condition |
| Minimum noise figure | NFmin | 1 | dB | at 1.8 GHz, 3 V, 3 mA |
| High gain | Gma | 15.5 | dB | at 1.8 GHz, 3 V, 15 mA |
| 3rd order intercept point at output | OIP3 | 24 | dBm | at 1.8 GHz, 3 V, 15 mA, ZS = ZL = 50 |
| Collector emitter breakdown voltage | V(BR)CEO | 6 | V | IC = 1 mA, IB = 0, open base |
| DC current gain | hFE | 90 - 160 | - | VCE = 3 V, IC = 15 mA, pulse measured |
| Transition frequency | fT | 11 - 14 | GHz | VCE = 3 V, IC = 15 mA, f = 1 GHz |
| Collector base capacitance | CCB | 0.32 - 0.5 | pF | VCB = 5 V, VBE = 0, f = 1 MHz, emitter grounded |
| Maximum power dissipation | Ptot | 210 | mW | TS 98 C |
| Junction temperature | TJ | 150 | C | - |
| Storage temperature | TStg | -55 - 150 | C | - |
2407291003_Infineon-BFR360FH6327XTSA1_C7433391.pdf
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