Power Management MOSFET HUAYI HY3008B Featuring Low On State Resistance and 80V High Breakdown Voltage
Key Attributes
Model Number:
HY3008B
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
100A
RDS(on):
8.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
199pF
Number:
1 N-channel
Output Capacitance(Coss):
440pF
Input Capacitance(Ciss):
3.15nF
Pd - Power Dissipation:
200W
Mfr. Part #:
HY3008B
Package:
TO-263-2
Product Description
Product Overview
The HY3008 is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers a high breakdown voltage of 80V and a continuous drain current of 100A, with a low on-state resistance of 6.6m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged. Lead-free devices are available, compliant with RoHS standards.
Product Attributes
- Brand: HUAYI
- Certifications: RoHS Compliant, Lead-Free
- Material: "Green" products contain molding compounds/die attach materials and 100% matte tin plate
Technical Specifications
| Model | VDS (V) | ID (A) | RDS(ON) (m) | Package |
| HY3008P/M/B/MF/PL/PM | 80 | 100 | 6.6 (typ.)@VGS=10V | TO-220FB-3L, TO-220FB-3S, TO-263-2L, TO-220MF-3L, TO-3PM-3L, TO-3PM-3S |
2410121257_HUAYI-HY3008B_C330373.pdf
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