High cell density trench technology MOSFET HUAYI HY1603P suitable for telecom power management and industrial
Key Attributes
Model Number:
HY1603P
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
62A
Operating Temperature -:
-
RDS(on):
5.5mΩ@10V,31A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
264pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.623nF
Output Capacitance(Coss):
702pF
Pd - Power Dissipation:
36W
Gate Charge(Qg):
-
Mfr. Part #:
HY1603P
Package:
TO-220FB
Product Description
Product Overview
The HY1603 is a super low gate charge N-Channel Enhancement Mode MOSFET featuring advanced high cell density Trench technology, excellent CdV/dt effect decline, and 100% EAS guaranteed. It is available in TO-220FB-3L and TO-263-2L packages. This MOSFET is designed for high-frequency synchronous buck converters for computer processor power and high-frequency isolated DC-DC converters with synchronous rectification for telecom and industrial applications.
Product Attributes
- Brand: HOOYI
- Certifications: Halogen-Free Device Available, RoHS compliant
Technical Specifications
| Model | Package | VDS (V) | ID (A) | RDS(ON) (m) @ VGS=10V | RDS(ON) (m) @ VGS=4.5V | VGS(th) (V) | EAS (mJ) | Qg (nC) | Ciss (pF) | Coss (pF) | Crss (pF) |
| HY1603P/B | TO-220FB-3L / TO-263-2L | 160 | 30 | 4.8 (typ.) | 6.4 (typ.) | 1.5-2.5 | 264 | 62 (typ.) | 1623 (typ.) | 702 (typ.) | 19 (typ.) |
2411220056_HUAYI-HY1603P_C180375.pdf
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