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quality Industrial Grade Wideband NPN RF Transistor Infineon BFP720H6327XTSA1 Featuring High Gain and Low Noise Figures factory
quality Industrial Grade Wideband NPN RF Transistor Infineon BFP720H6327XTSA1 Featuring High Gain and Low Noise Figures factory

Industrial Grade Wideband NPN RF Transistor Infineon BFP720H6327XTSA1 Featuring High Gain and Low Noise Figures

Key Attributes
Model Number: BFP720H6327XTSA1
Product Custom Attributes
Current - Collector Cutoff:
100mA
Emitter-Base Voltage(Vebo):
1.2V
Pd - Power Dissipation:
100mW
Transition Frequency(fT):
45GHz
Type:
NPN
Current - Collector(Ic):
25mA
Collector - Emitter Voltage VCEO:
4V
Operating Temperature:
-
Mfr. Part #:
BFP720H6327XTSA1
Package:
SOT-343-4
Product Description

Product Overview

The BFP720 is a wideband NPN RF heterojunction bipolar transistor (HBT) designed for high-frequency applications. It offers a high transition frequency (fT = 45 GHz) enabling low noise figures at elevated frequencies, significant gain, and excellent linearity (OIP3). This product is qualified for industrial applications according to JEDEC standards.

Product Attributes

  • Brand: Infineon
  • Material: SiGe:C
  • Package: SOT343
  • Certifications: Qualified for industrial applications according to JEDEC47/20/22

Technical Specifications

ParameterSymbolValuesUnitNote or test condition
Absolute Maximum Ratings
Collector emitter voltageVCEO4.0VOpen base
Collector emitter voltageVCES13VE-B short circuited
Collector base voltageVCBO13VOpen emitter
Emitter base voltageVEBO1.2VOpen collector
Base currentIB2mA
Collector currentIC25mA
Total power dissipationPtot100mWTS 108 C
Junction temperatureTJ150C
Storage temperatureTStg-55 to 150C
Thermal Characteristics
Junction - soldering point thermal resistanceRthJS420K/W
DC Characteristics
Collector emitter breakdown voltageV(BR)CEO4.0 - 4.7VIC = 1 mA, IB = 0, open base
Collector emitter leakage currentICES30AVCE = 13 V, VBE = 0, E-B short circuited (max)
Collector base leakage currentICBO100nAVCB = 5 V, IE = 0, open emitter (max)
Emitter base leakage currentIEBO2AVEB = 0.5 V, IC = 0, open collector (max)
DC current gainhFE160 - 400VCE = 3 V, IC = 13 mA, pulse measured
General AC Characteristics
Transition frequencyfT45GHzVCE = 3 V, IC = 13 mA, f = 1 GHz
Collector base capacitanceCCB0.06pFVCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded
Collector emitter capacitanceCCE0.35pFVCE = 3 V, VBE = 0, f = 1 MHz, base grounded
Emitter base capacitanceCEB0.35pFVEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded
Frequency Dependent AC Characteristics (VCE = 3 V, TA = 25 C, ZS = ZL = 50 )
ParameterSymbolf = 150 MHzf = 450 MHzf = 900 MHz
Maximum power gainGms37.5 dB32.5 dB29.5 dB
Transducer gain|S21|29.5 dB28.5 dB27.5 dB
Minimum noise figureNFmin0.4 dB (IC=5mA)0.4 dB (IC=5mA)0.4 dB (IC=5mA)
Associated gainGass28.5 dB (IC=5mA)28 dB (IC=5mA)26 dB (IC=5mA)
3rd order intercept point at outputOIP322 dBm (IC=13mA)21.5 dBm (IC=13mA)21 dBm (IC=13mA)
1 dB gain compression point at outputOP1dB6 dBm (IC=13mA)5.5 dBm (IC=13mA)5.5 dBm (IC=13mA)
ParameterSymbolf = 1.5 GHzf = 1.9 GHzf = 2.4 GHz
Maximum power gainGms27.5 dB26 dB
Transducer gain|S21|25.5 dB24.5 dB
Minimum noise figureNFmin0.45 dB (IC=5mA)0.45 dB (IC=5mA)
Associated gainGass24 dB (IC=5mA)23 dB (IC=5mA)
3rd order intercept point at outputOIP321.5 dBm (IC=13mA)22 dBm (IC=13mA)
1 dB gain compression point at outputOP1dB6 dBm (IC=13mA)7 dBm (IC=13mA)

2410251539_Infineon-BFP720H6327XTSA1_C3199246.pdf

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