N Channel Enhancement Mode MOSFET HUAYI HYG035N04LR1D with Low RDS ON and Avalanche Tested Rugged Design
Key Attributes
Model Number:
HYG035N04LR1D
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
207pF
Number:
1 N-channel
Input Capacitance(Ciss):
5.905nF@0V
Pd - Power Dissipation:
61W
Gate Charge(Qg):
107.1nC@10V
Mfr. Part #:
HYG035N04LR1D
Package:
TO-252-2L
Product Description
Product Overview
The HYG035N04LR1D is a single N-Channel enhancement mode MOSFET designed for various power applications. It features low on-resistance (RDS(ON)) at typical values of 3.0 m @VGS = 10V and 4.0 m @VGS = 4.5V, 100% avalanche tested, and a reliable, rugged design. Halogen-free devices are available.
Product Attributes
- Brand: HYG (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Material: Halogen-Free Devices Available (RoHS compliant)
- Certifications: RoHS
Technical Specifications
| Parameter | Test Conditions | Unit | Min | Typ. | Max | |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage (VDSS) | V | 40 | ||||
| Gate-Source Voltage (VGSS) | V | ±20 | ||||
| Junction Temperature Range (TJ) | -55 | 175 | ||||
| Storage Temperature Range (TSTG) | -55 | 175 | ||||
| Source Current-Continuous (IS) | Tc=25 | A | 93 | |||
| Pulsed Drain Current (IDM) | Tc=25 | A | 360 | |||
| Continuous Drain Current (ID) | Tc=25 | A | 93 | |||
| Continuous Drain Current (ID) | Tc=100 | A | 66 | |||
| Maximum Power Dissipation (PD) | Tc=25 | W | 61 | |||
| Maximum Power Dissipation (PD) | Tc=100 | W | 30 | |||
| Thermal Resistance, Junction-to-Case (RJC) | /W | 2.45 | ||||
| Thermal Resistance, Junction-to-Ambient (RJA) | Surface mounted on FR-4 board | /W | 60.0 | |||
| Single Pulsed-Avalanche Energy (EAS) | L=0.3mH | mJ | 268*** | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS=250A | V | 40 | - | - | |
| Drain-to-Source Leakage Current (IDSS) | VDS=40V,VGS=0V | μA | - | 1 | ||
| Drain-to-Source Leakage Current (IDSS) | TJ=125 | μA | - | 50 | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | V | 1 | 1.6 | 3 | |
| Gate-Source Leakage Current (IGSS) | VGS=±20V,VDS=0V | nA | - | ±100 | ||
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=40A | mΩ | 3.0 | 3.5 | ||
| Drain-Source On-State Resistance (RDS(ON)) | VGS=4.5V,IDS=40A | mΩ | 4.0 | 5.0 | ||
| Diode Forward Voltage (VSD) | ISD=40A,VGS=0V | V | 0.8 | 1.2 | ||
| Reverse Recovery Time (trr) | ISD=40A,dISD/dt=100A/μs | ns | 17 | - | ||
| Reverse Recovery Charge (Qrr) | nC | 10 | - | |||
| Dynamic Characteristics | ||||||
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | Ω | 2 | - | ||
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | 5905 | - | ||
| Output Capacitance (Coss) | pF | 385 | - | |||
| Reverse Transfer Capacitance (Crss) | pF | 207 | - | |||
| Turn-on Delay Time (td(ON)) | VDD=20V,RG=4Ω, IDS=40A,VGS=10V | ns | 14 | - | ||
| Turn-on Rise Time (Tr) | ns | 59 | - | |||
| Turn-off Delay Time (td(OFF)) | ns | 89 | - | |||
| Turn-off Fall Time (Tf) | ns | 83 | - | |||
| Gate Charge Characteristics | ||||||
| Total Gate Charge (Qg) | VDS =32V, VGS=10V, ID=40A | nC | 107.1 | - | ||
| Total Gate Charge (Qg) | VGS=4.5V | nC | 52.4 | - | ||
| Gate-Source Charge (Qgs) | nC | 22.2 | - | |||
| Gate-Drain Charge (Qgd) | nC | 22.3 | - | |||
2410122027_HUAYI-HYG035N04LR1D_C2763414.pdf
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