Power Management N Channel MOSFET HUAYI HYG420N06LR1D 60 Volt 22 Amp Low RDS ON for DC DC Conversion
Key Attributes
Model Number:
HYG420N06LR1D
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
22A
Operating Temperature -:
-55℃~+175℃
RDS(on):
50mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
62pF
Number:
-
Input Capacitance(Ciss):
843pF@0V
Pd - Power Dissipation:
37.5W
Gate Charge(Qg):
16nC
Mfr. Part #:
HYG420N06LR1D
Package:
TO-252
Product Description
HYG420N06LR1D/U/V N-Channel Enhancement Mode MOSFET
The HYG420N06LR1D/U/V is a high-performance N-Channel Enhancement Mode MOSFET designed for power management applications, including DC/DC conversion and synchronous rectification. It offers a 60V/22A rating with low on-resistance of 35m (typ.) at VGS = 10V and 44m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, ensuring reliability and ruggedness. It is available in RoHS compliant, Halogen-free, and Green device options.
Product Attributes
- Brand: HYG
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Material: Halogen free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Model | Package | VDS (V) | ID (A) | RDS(ON) (m) @ VGS=10V | RDS(ON) (m) @ VGS=4.5V | Avalanche Energy (mJ) |
|---|---|---|---|---|---|---|
| HYG420N06LR1D | TO-252-2L | 60 | 22 | 35 (typ.) | 44 (typ.) | 23.5 (typ.) |
| HYG420N06LR1U | TO-251-3L | 60 | 22 | 35 (typ.) | 44 (typ.) | 23.5 (typ.) |
| HYG420N06LR1V | TO-251-3S | 60 | 22 | 35 (typ.) | 44 (typ.) | 23.5 (typ.) |
2411220237_HUAYI-HYG420N06LR1D_C2841914.pdf
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