Low RDS ON N Channel MOSFET HYG065N15NS1P avalanche tested and suitable for power switching circuits
Product Overview
The HYG065N15NS1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It features low on-resistance (RDS(ON)=6.2m typ. @ VGS = 10V), 100% avalanche tested, and a reliable, rugged construction. This device is available in lead-free and green (RoHS compliant) versions, making it suitable for environmentally conscious designs. It is ideal for use in Uninterruptible Power Supply systems and other power switching circuits.
Product Attributes
- Brand: HYG (Huayi)
- Origin: China
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
Technical Specifications
| Model | Parameter | Test Conditions | Min | Typ. | Max | Unit |
| HYG065N15NS1 | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS=250A | 150 | - | - | V |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 2 | 3.2 | 4 | V | |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=100A | - | 6.2 | 7.5 | m | |
| Diode Forward Voltage (VSD) | ISD=100A,VGS=0V | - | 0.93 | 1.3 | V | |
| Continuous Drain Current (ID) | Tc=25C | - | 165 | - | A | |
| Continuous Drain Current (ID) | Tc=100C | - | 116 | - | A | |
| Maximum Power Dissipation (PD) | Tc=25C | - | 375 | - | W | |
| HYG065N15NS1P/B | Input Capacitance (Ciss) | VGS=0V, VDS=75V, Frequency=1.0MHz | - | 6646 | - | pF |
| Output Capacitance (Coss) | VGS=0V, VDS=75V, Frequency=1.0MHz | - | 888 | - | pF | |
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS=75V, Frequency=1.0MHz | - | 88 | - | pF |
2411220100_HUAYI-HYG065N15NS1P_C2687415.pdf
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