Low RDS ON N Channel MOSFET HYG065N15NS1P avalanche tested and suitable for power switching circuits

Key Attributes
Model Number: HYG065N15NS1P
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
165A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
88pF
Number:
1 N-channel
Input Capacitance(Ciss):
6.646nF
Pd - Power Dissipation:
375W
Gate Charge(Qg):
96nC@10V
Mfr. Part #:
HYG065N15NS1P
Package:
TO-220FB-3
Product Description

Product Overview

The HYG065N15NS1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It features low on-resistance (RDS(ON)=6.2m typ. @ VGS = 10V), 100% avalanche tested, and a reliable, rugged construction. This device is available in lead-free and green (RoHS compliant) versions, making it suitable for environmentally conscious designs. It is ideal for use in Uninterruptible Power Supply systems and other power switching circuits.

Product Attributes

  • Brand: HYG (Huayi)
  • Origin: China
  • Certifications: RoHS Compliant, Lead-Free, Green Devices Available

Technical Specifications

ModelParameterTest ConditionsMinTyp.MaxUnit
HYG065N15NS1Drain-Source Breakdown Voltage (BVDSS)VGS=0V,IDS=250A150--V
Gate Threshold Voltage (VGS(th))VDS=VGS, IDS=250A23.24V
Drain-Source On-State Resistance (RDS(ON))VGS=10V,IDS=100A-6.27.5m
Diode Forward Voltage (VSD)ISD=100A,VGS=0V-0.931.3V
Continuous Drain Current (ID)Tc=25C-165-A
Continuous Drain Current (ID)Tc=100C-116-A
Maximum Power Dissipation (PD)Tc=25C-375-W
HYG065N15NS1P/BInput Capacitance (Ciss)VGS=0V, VDS=75V, Frequency=1.0MHz-6646-pF
Output Capacitance (Coss)VGS=0V, VDS=75V, Frequency=1.0MHz-888-pF
Reverse Transfer Capacitance (Crss)VGS=0V, VDS=75V, Frequency=1.0MHz-88-pF

2411220100_HUAYI-HYG065N15NS1P_C2687415.pdf

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