Silicon NPN Digital Transistor Infineon BCR108E6327HTSA1 Designed for Inverter and Interface Circuits
Key Attributes
Model Number:
BCR108E6327HTSA1
Product Custom Attributes
Input Resistor:
2.9kΩ
Resistor Ratio:
0.052
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
BCR108E6327HTSA1
Package:
SOT-23-3
Product Description
BCR108 Series NPN Silicon Digital Transistor
The BCR108 series are NPN silicon digital transistors designed for switching circuits, inverters, interface circuits, and driver circuits. They feature built-in bias resistors (R1=2.2 k, R2=47 k). The BCR108S variant offers two internally isolated transistors with good matching in a single multichip package, suitable for orientation in reels. These components are Pb-free (RoHS compliant) and qualified according to AEC Q101 standards.
Product Attributes
- Brand: Infineon Technologies
- Material: Silicon
- Certifications: RoHS compliant, AEC Q101
Technical Specifications
| Parameter | BCR108 | BCR108W | BCR108S | Unit |
| Collector-emitter voltage (VCEO) | 50 | V | ||
| Collector-base voltage (VCBO) | 50 | V | ||
| Input forward voltage (Vi(fwd)) | 20 | V | ||
| Input reverse voltage (Vi(rev)) | 5 | V | ||
| Collector current (IC) | 100 | mA | ||
| Total power dissipation (Ptot) at TS 102C | 200 | mW | ||
| Total power dissipation (Ptot) at TS 115C | 250 | mW | ||
| Total power dissipation (Ptot) at TS 124C | 250 | mW | ||
| Junction temperature (Tj) | 150 | C | ||
| Storage temperature (Tstg) | -65 ... 150 | C | ||
| Junction - soldering point Thermal Resistance (RthJS) | 240 | 105 | 140 | K/W |
| Collector-emitter breakdown voltage (V(BR)CEO) at IC = 100 A, IB = 0 | 50 | V | ||
| Collector-base breakdown voltage (V(BR)CBO) at IC = 10 A, IE = 0 | 50 | V | ||
| Collector-base cutoff current (ICBO) at VCB = 40 V, IE = 0 | 100 | nA | ||
| Emitter-base cutoff current (IEBO) at VEB = 5 V, IC = 0 | 164 | A | ||
| DC current gain (hFE) at IC = 5 mA, VCE = 5 V | 70 | - | - | - |
| Collector-emitter saturation voltage (VCEsat) at IC = 10 mA, IB = 0.5 mA | 0.3 | V | ||
| Input off voltage (Vi(off)) at IC = 100 A, VCE = 5 V | 0.4 | - | 0.8 | V |
| Input on voltage (Vi(on)) at IC = 2 mA, VCE = 0.3 V | 0.5 | - | 1.1 | V |
| Input resistor (R1) | 2.2 | k | ||
| Resistor ratio (R1/R2) | 0.047 | - | ||
| Transition frequency (fT) at IC = 10 mA, VCE = 5 V, f = 1 MHz | 170 | MHz | ||
| Collector-base capacitance (Ccb) at VCB = 10 V, f = 1 MHz | 2 | pF | ||
2410121919_Infineon-BCR108E6327HTSA1_C7425478.pdf
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