Power Switching MOSFET HUAYI HY029N10B Featuring 100V Voltage and 270A Drain Current for Industrial
Key Attributes
Model Number:
HY029N10B
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
270A
RDS(on):
3.3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
37pF
Number:
1 N-channel
Output Capacitance(Coss):
1.624nF
Input Capacitance(Ciss):
10.8nF
Pd - Power Dissipation:
394.7W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
HY029N10B
Package:
TO-263-2
Product Description
Product Overview
The HY029N10P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers high performance with a voltage rating of 100V and a continuous drain current of 270A. Key advantages include 100% avalanche testing, reliability, and availability in lead-free and green (RoHS compliant) versions. This MOSFET is suitable for use in Uninterruptible Power Supplies (UPS) and other power switching circuits.
Product Attributes
- Brand: HYMEXTA
- Origin: China
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Unit | Min | Typ. | Max |
| Absolute Maximum Ratings | VDSS | Tc=25C Unless Otherwise Noted | V | - | - | 100 |
| VGSS | V | - | ±20 | - | ||
| TJ | °C | - | - | 175 | ||
| TSTG | °C | -55 | - | 175 | ||
| ID | Tc=25°C | A | - | 270 | - | |
| ID | Tc=100°C | A | - | 190 | - | |
| Electrical Characteristics | BVDSS | VGS=0V,IDS=250μA | V | 100 | - | - |
| IDSS | VDS=100V,VGS=0V | μA | - | - | 1.0 | |
| VGS(th) | VDS=VGS, IDS=250μA | V | 2 | 3 | 4 | |
| RDS(ON) | VGS=10V,IDS=50A | mΩ | - | 2.6 | 3.3 | |
| VSD | ISD=50A,VGS=0V | V | - | 0.8 | 1.3 | |
| trr | ISD=50A,dISD/dt=100A/μs | ns | - | 48 | - | |
| Dynamic Characteristics | RG | VGS=0V,VDS=0V,F=1MHz | Ω | - | 3.6 | - |
| Ciss | VGS=0V, VDS=50V, Frequency=1.0MHz | pF | - | 10800 | - | |
| Coss | pF | - | 1624 | - | ||
| Crss | pF | - | 37 | - | ||
| td(ON) | VDD=50V,RG=3.6Ω, IDS=50A,VGS=10V | ns | - | 28 | - | |
| td(OFF) | ns | - | 95 | - | ||
| Gate Charge Characteristics | Qg | VDS=50V, VGS=10V ID=50A | nC | - | 148.7 | - |
| Qgs | nC | - | 43.9 | - | ||
| Qgd | nC | - | 27.1 | - |
2411220237_HUAYI-HY029N10B_C358130.pdf
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