Power Switching MOSFET HUAYI HYG032N03LR1C1 Single N Channel Enhancement Mode with RoHS Compliance
Key Attributes
Model Number:
HYG032N03LR1C1
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
55A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
277pF
Number:
-
Output Capacitance(Coss):
332pF
Input Capacitance(Ciss):
2.872nF
Pd - Power Dissipation:
23W
Gate Charge(Qg):
61nC@10V
Mfr. Part #:
HYG032N03LR1C1
Package:
DFN-8(3x3)
Product Description
Product Overview
The HYG032N03LR1C1 is a single N-Channel Enhancement Mode MOSFET designed for power management and switching applications. It features a low on-resistance (RDS(ON)) of 3.3m at VGS=10V and 4.3m at VGS=4.5V, 100% avalanche tested, and a reliable, rugged construction. This device is available in Halogen Free and Green (RoHS Compliant) versions.
Product Attributes
- Brand: HYM (Hymexa)
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Certifications: RoHS Compliant, Halogen Free
- Package Type: DFN3*3-8L
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 30 | V | |||
| VGSS | Gate-Source Voltage | ±20 | V | |||
| TJ | Junction Temperature Range | -55 | 175 | °C | ||
| TSTG | Storage Temperature Range | -55 | 175 | °C | ||
| ID | Continuous Drain Current | Tc=25°C | 55 | A | ||
| ID | Continuous Drain Current | Tc=100°C | 38.8 | A | ||
| IDM | Pulsed Drain Current | Tc=25°C | 220 | A | ||
| PD | Maximum Power Dissipation | Tc=25°C | 23 | W | ||
| PD | Maximum Power Dissipation | Tc=100°C | 11.5 | W | ||
| RθJC | Thermal Resistance, Junction-to-Case | 6.5 | °C/W | |||
| RθJA | Thermal Resistance, Junction-to-Ambient | 75 | °C/W | |||
| EAS | Single Pulsed-Avalanche Energy | L=0.3mH | 150 | mJ | ||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,IDS=250μA | 30 | - | - | V |
| IDSS | Drain-to-Source Leakage Current | VDS=30V,VGS=0V | - | - | 1 | μA |
| IDSS | Drain-to-Source Leakage Current | TJ=125°C | - | - | 50 | μA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250μA | 1.2 | 1.8 | 2.5 | V |
| IGSS | Gate-Source Leakage Current | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V,IDS=20A | - | 3.3 | 4.5 | mΩ |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V,IDS=20A | - | 4.3 | 5.5 | mΩ |
| VSD | Diode Forward Voltage | ISD=20A,VGS=0V | - | 0.8 | 1.2 | V |
| trr | Reverse Recovery Time | ISD=20A,dISD/dt=100A/μs | - | 16 | - | ns |
| Qrr | Reverse Recovery Charge | - | 9 | - | nC | |
| RG | Gate Resistance | VGS=0V,VDS=0V, Frequency=1.0MHz | - | 2 | - | Ω |
| Ciss | Input Capacitance | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 2872 | - | pF |
| Coss | Output Capacitance | - | 332 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 277 | - | pF | |
| td(ON) | Turn-on Delay Time | VDD=15V,RG=4Ω, IDS=20A,VGS=10V | - | 11 | - | ns |
| Tr | Turn-on Rise Time | - | 50 | - | ns | |
| td(OFF) | Turn-off Delay Time | - | 52 | - | ns | |
| Tf | Turn-off Fall Time | - | 57 | - | ns | |
| Qg(10V) | Total Gate Charge | VDS =24V, VGS=10V, ID=20A | - | 61 | - | nC |
| Qg(4.5V) | Total Gate Charge | - | 32 | - | nC | |
| Qgs | Gate-Source Charge | - | 10 | - | nC | |
| Qgd | Gate-Drain Charge | - | 16 | - | nC | |
2411220121_HUAYI-HYG032N03LR1C1_C2827233.pdf
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