P Channel MOSFET HUAYI HYG190P13NA1B Featuring 125 Volt Drain Source Voltage and 72 Amp Continuous Current
Key Attributes
Model Number:
HYG190P13NA1B
Product Custom Attributes
Drain To Source Voltage:
125V
Current - Continuous Drain(Id):
72A
Operating Temperature -:
-55℃~+175℃
RDS(on):
24mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
430pF
Number:
1 P-Channel
Output Capacitance(Coss):
572pF
Input Capacitance(Ciss):
8.348nF
Pd - Power Dissipation:
230W
Gate Charge(Qg):
160nC@10V
Mfr. Part #:
HYG190P13NA1B
Package:
TO-263-2
Product Description
Product Overview
The HYG190P13NA1/B is a P-Channel Enhancement Mode MOSFET designed for portable equipment and battery-powered systems. It features a high drain-source voltage of -125V and a continuous drain current of -72A, with a low on-state resistance of 18 m (typ.) at VGS = -10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green (RoHS compliant) options available.
Product Attributes
- Brand: HYG (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Material: Lead Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Test Conditions | HYG190P13NA1 Unit | Min | Typ. | Max | |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | V | -125 | - | - | |
| VGSS | Gate-Source Voltage | V | - | ±20 | - | |
| TJ | Maximum Junction Temperature | °C | -55 | - | 175 | |
| TSTG | Storage Temperature Range | °C | -55 | - | 175 | |
| IS | Source Current-Continuous(Body Diode) Tc=25°C | A | - | -72 | - | |
| IDM | Pulsed Drain Current Tc=25°C | A | - | -290 | - | |
| ID | Continuous Drain Current Tc=25°C | A | - | -72 | - | |
| ID | Continuous Drain Current Tc=100°C | A | - | -51 | - | |
| PD | Maximum Power Dissipation Tc=25°C | W | - | 230 | - | |
| PD | Maximum Power Dissipation Tc=100°C | W | - | 115 | - | |
| RθJC | Thermal Resistance, Junction-to-Case | °C/W | - | 0.65 | - | |
| RθJA | Thermal Resistance, Junction-to-Ambient | °C/W | - | 62.5 | - | |
| EAS | Single Pulsed-Avalanche Energy L=0.3mH | mJ | - | 579.5 | - | |
| Static Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage VGS=0V,IDS= -250μA | V | -125 | - | - | |
| IDSS | Drain-to-Source Leakage Current VDS= -125V,VGS=0V | μA | - | - | -1 | |
| IDSS | Drain-to-Source Leakage Current TJ=125°C | μA | - | - | -50 | |
| VGS(th) | Gate Threshold Voltage VDS=VGS, IDS= -250μA | V | -1.5 | -2.5 | -3.5 | |
| IGSS | Gate-Source Leakage Current VGS=±20V,VDS=0V | nA | - | - | ±100 | |
| RDS(ON) | Drain-Source On-State Resistance VGS= -10V,IDS= -30A | mΩ | - | 18 | 24 | |
| Diode Characteristics | ||||||
| VSD* | Diode Forward Voltage ISD= -30A,VGS=0V | V | - | -0.83 | -1.3 | |
| trr | Reverse Recovery Time ISD=-30A,dISD/dt=100A/μs | ns | - | 44.6 | - | |
| Qrr | Reverse Recovery Charge | nC | - | 86.2 | - | |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance VGS=0V,VDS=0V,F=1MHz | Ω | - | 1.8 | - | |
| Ciss | Input Capacitance VGS=0V, VDS= -25V, Frequency=1.0MHz | pF | - | 8348 | - | |
| Coss | Output Capacitance | pF | - | 572 | - | |
| Crss | Reverse Transfer Capacitance | pF | - | 430 | - | |
| td(ON) | Turn-on Delay Time VDD= -65V,RG=2.5Ω, IDS= -30A,VGS= -10V | ns | - | 23 | - | |
| Tr | Turn-on Rise Time | ns | - | 60.2 | - | |
| td(OFF) | Turn-off Delay Time | ns | - | 76.9 | - | |
| Tf | Turn-off Fall Time | ns | - | 102.5 | - | |
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge VDS = -65V, VGS= -10V, ID= -30A | nC | - | 160 | - | |
| Qgs | Gate-Source Charge | nC | - | 23 | - | |
| Qgd | Gate-Drain Charge | nC | - | 67 | - | |
2411220042_HUAYI-HYG190P13NA1B_C2763412.pdf
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