N Channel MOSFET HUAYI HY3410B with 100V Drain Source Voltage and 140A Continuous Current Rating
Key Attributes
Model Number:
HY3410B
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
140A
RDS(on):
7.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
490pF
Number:
1 N-channel
Output Capacitance(Coss):
943pF
Input Capacitance(Ciss):
6.14nF
Pd - Power Dissipation:
285W
Gate Charge(Qg):
130nC@10V
Mfr. Part #:
HY3410B
Package:
TO-263-2L
Product Description
Product Overview
The HY3410 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a 100V/140A rating and a low RDS(ON) of 6.2 m (typ.) at VGS=10V. This device is reliable, rugged, and available in Lead Free and Green (RoHS Compliant) versions, with 100% avalanche testing.
Product Attributes
- Brand: HYMEXA
- Certifications: RoHS Compliant, Green Devices Available
- Material: Lead Free and Green Devices Available (RoHS Compliant)
Technical Specifications
| Model | Package Type | VDSS (V) | ID (A) | RDS(ON) (m) | VGS(th) (V) | Avalanche Energy (mJ) | Package Code |
| HY3410P/M/B/PS/PM/MF | TO-220FB-3L | 100 | 140 (TC=25C) | 6.2 (typ. @ VGS=10V) | 2.0-4.0 | 0.5mH | P |
| HY3410P/M/B/PS/PM/MF | TO-220FB-3S | 100 | 140 (TC=25C) | 6.2 (typ. @ VGS=10V) | 2.0-4.0 | 0.5mH | M |
| HY3410P/M/B/PS/PM/MF | TO-263-2L | 100 | 140 (TC=25C) | 6.2 (typ. @ VGS=10V) | 2.0-4.0 | 0.5mH | B |
| HY3410P/M/B/PS/PM/MF | TO-3PM-3S | 100 | 140 (TC=25C) | 6.2 (typ. @ VGS=10V) | 2.0-4.0 | 0.5mH | PM |
| HY3410P/M/B/PS/PM/MF | TO-3PS-3L | 100 | 140 (TC=25C) | 6.2 (typ. @ VGS=10V) | 2.0-4.0 | 0.5mH | PS |
| HY3410P/M/B/PS/PM/MF | TO-220MF-3L | 100 | 140 (TC=25C) | 6.2 (typ. @ VGS=10V) | 2.0-4.0 | 0.5mH | MF |
2409302330_HUAYI-HY3410B_C246447.pdf
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