High Current N Channel MOSFET HUAYI HY3403B Designed for Switching and Power Management Applications
Key Attributes
Model Number:
HY3403B
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
140A
Operating Temperature -:
-
RDS(on):
3.4mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
322pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
4.726nF@25V
Pd - Power Dissipation:
115W
Gate Charge(Qg):
120nC@10V
Mfr. Part #:
HY3403B
Package:
TO-263-2L
Product Description
Product Overview
The HY3403P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers low on-resistance, high continuous drain current capability, and robust avalanche performance, making it suitable for demanding power electronics designs. Available in TO-220FB-3L and TO-263-2L packages, with lead-free options.
Product Attributes
- Brand: HY (Huayi Microelectronics)
- Product Line: HY3403P/B
- Material: Lead-Free Device Available
- Certifications: RoHS compliant, Halogen free
Technical Specifications
| Parameter | Test Conditions | HY3403 | Unit | Min | Typ | Max |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage (VDSS) | 30 | V | ||||
| Gate-Source Voltage (VGSS) | ±20 | V | ||||
| Maximum Junction Temperature (TJ) | 175 | °C | ||||
| Storage Temperature Range (TSTG) | -55 to 175 | °C | ||||
| Drain Current-Continuous (ID) | Tc=25°C, Mounted on Large Heat Sink | 140 | A | |||
| Drain Current-Continuous (ID) | Tc=100°C | 101 | A | |||
| Pulsed Drain Current (IDM) | Tc=25°C | 560 | A | |||
| Maximum Power Dissipation (PD) | Tc=25°C | 115 | W | |||
| Maximum Power Dissipation (PD) | Tc=100°C | 57.5 | W | |||
| Thermal Resistance, Junction-to-Case (RTJC) | °C/W | 1.3 | ||||
| Thermal Resistance, Junction-to-Ambient (RTJA) | Surface mounted on FR-4 board | °C/W | 62.5 | |||
| Single Pulsed-Avalanche Energy (EAS) | L=0.3mH | 186 | mJ | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS=250uA | 30 | V | |||
| Drain-to-Source Leakage Current (IDSS) | VDS=30V, VGS=0V | uA | 1 | |||
| Drain-to-Source Leakage Current (IDSS) | TJ=55°C | uA | 5 | |||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250uA | V | 1 | 1.5 | 3 | |
| Gate-Source Leakage Current (IGSS) | VGS=±20V,VDS=0V | nA | ±100 | |||
| Drain-Source On-state Resistance (RDS(ON)) | VGS=10V,IDS=70A | mΩ | 2.2 | 2.8 | ||
| Drain-Source On-state Resistance (RDS(ON)) | VGS=4.5V,IDS=70A | mΩ | 2.7 | 3.4 | ||
| Diode Forward Voltage (VSD) | ISD=70A,VGS=0V | V | 0.8 | 1.3 | ||
| Reverse Recovery Time (trr) | ISD=70A,dISD/dt=100A/us | ns | 23 | |||
| Reverse Recovery Charge (Qrr) | nC | 58 | ||||
| Dynamic Characteristics | ||||||
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1 MHz | Ω | 1.9 | |||
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | 4726 | |||
| Output Capacitance (Coss) | pF | 469 | ||||
| Reverse Transfer Capacitance (Crss) | pF | 322 | ||||
| Turn-on Delay Time (td(ON)) | VDD=15V,RG=4Ω, IDS=70A,VGS=10V | ns | 13 | |||
| Turn-on Rise Time (Tr) | ns | 11 | ||||
| Turn-off Delay Time (td(OFF)) | ns | 41 | ||||
| Turn-off Fall Time (Tf) | ns | 14 | ||||
| Gate Charge Characteristics | ||||||
| Total Gate Charge (Qg) | VDS =24V, VGS=10V ID=70A | nC | 120 | |||
| Gate-Source Charge (Qgs) | nC | 9 | ||||
| Gate-Drain Charge (Qgd) | nC | 26 | ||||
2410121932_HUAYI-HY3403B_C2688727.pdf
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