Automotive Radio Silicon Variable Capacitance Diode Infineon BB914 Featuring Monolithic Chip Design
Key Attributes
Model Number:
BB914
Product Custom Attributes
Mfr. Part #:
BB914
Product Description
Product Overview
The BB914 is a Silicon Variable Capacitance Diode designed for FM radio tuners, featuring an extended frequency band and high tuning ratio at low supply voltage, making it ideal for car radio applications. Its monolithic chip with common cathode configuration ensures perfect dual diode tracking, while offering good linearity for C-V curve and a high figure of merit. This Pb-free (RoHS compliant) component is available in a SOT23 package.
Product Attributes
- Brand: Infineon Technologies
- Type: Silicon Variable Capacitance Diode
- Package: SOT23
- Configuration: Common cathode
- Certifications: Pb-free (RoHS compliant)
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Diode reverse voltage | VR | 18 | V | |
| Peak reverse voltage | VRM | 20 | V | (R 5k) |
| Forward current | IF | 50 | mA | |
| Operating temperature range | Top | -55 ... 125 | C | |
| Storage temperature | Tstg | -55 ... 150 | C | |
| Diode capacitance | CT | 42.5 typ. | pF | VR = 2 V, f = 1 MHz |
| Diode capacitance | CT | 17.6 typ. | pF | VR = 8 V, f = 1 MHz |
| Capacitance ratio | CT2/CT8 | 2.34 typ. | VR = 2 V, VR = 8 V, f = 1 MHz | |
| Capacitance matching | CT/CT | 1.5 max. | % | VR = 2 V, VR = 8 V, f = 1 MHz |
| Series resistance | rS | 0.28 typ. | VR = 2 V, f = 100 MHz | |
| Diode reverse current | IR | 200 max. | nA | VR = 16 V, TA = 85 C |
| Diode reverse current | IR | 20 max. | nA | VR = 16 V, TA = 25 C |
| Inductance | LS | 1.8 | nH |
2410121845_Infineon-BB914_C3272002.pdf
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