Power Switching MOSFET Huixin HXM10H03NSG Featuring Low On Resistance and High Temperature Operation
Key Attributes
Model Number:
HXM10H03NSG
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
3A
RDS(on):
136mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 N-channel
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
650pF
Output Capacitance(Coss):
24pF
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
HXM10H03NSG
Package:
SOT-23-6
Product Description
Product Overview
The HXM10H03NSG is an N-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, offering ultra-low RDS(on). Its excellent package design ensures efficient heat dissipation, making it suitable for power switching applications and uninterruptible power supplies. Key features include a VDS of 100V and an ID of 3A with RDS(on) less than 160m at VGS=10V.
Product Attributes
- Brand: HXM
- Model: HXM10H03NSG
- Package: SOT-23-6
- Marking Code: 0103G
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 3 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 20 | A | ||
| Maximum Power Dissipation | PD | 1.5 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | Note2 | 83 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250µA | 100 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | -- | -- | 1 | µA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250µA | 1.0 | 1.5 | 2.0 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=10V,ID=3A | -- | 136 | 160 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=4.5V,ID=3A | -- | 140 | 170 | mΩ |
| Forward Transconductance | gFS | Note3,VDS=5V,ID=3A | -- | 5 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V,VGS=0V,f=1MHz | -- | 650 | -- | pF |
| Output Capacitance | Coss | -- | 24 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 20 | -- | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=50V,RL=19Ω,VGS=10V,RGEN=3Ω | -- | 6 | -- | nS |
| Turn-on Rise Time | tr | -- | 4 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 20 | -- | nS | |
| Turn-off Fall Time | tf | -- | 4 | -- | nS | |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=50V,ID=3A,VGS=10V | -- | 20 | -- | nC |
| Gate-Source Charge | Qgs | -- | 2.1 | -- | nC | |
| Gate-Drain Charge | Qg | -- | 3.3 | -- | nC | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3,VGS=0V,IS=3A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 3 | A |
2509051530_Huixin-HXM10H03NSG_C51883369.pdf
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