Low Gate Charge N Channel MOSFET HUAYI HY1603D Designed for High Frequency Isolated DC DC Converters
Key Attributes
Model Number:
HY1603D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
62A
Operating Temperature -:
-
RDS(on):
8mΩ@4.5V,31A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
264pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.623nF
Output Capacitance(Coss):
702pF
Pd - Power Dissipation:
36W
Gate Charge(Qg):
28nC@10V
Mfr. Part #:
HY1603D
Package:
TO-252-2(DPAK)
Product Description
Product Overview
The HOOYI HY1603D/U/S is a N-Channel Enhancement Mode MOSFET featuring super low gate charge, advanced high cell density Trench technology, and excellent CdV/dt effect decline. It offers 100% EAS guaranteed and is available in a Halogen-Free device. This MOSFET is ideal for high-frequency synchronous buck converters for computer processor power and high-frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use.
Product Attributes
- Brand: HOOYI
- Origin: China (Xi'an Hooyi Semiconductor Technology Co., Ltd.)
- Material: Halogen-Free Device Available, Lead-Free Device (RoHS compliant)
- Certifications: RoHS compliant, IPC/JEDEC J-STD-020D for MSL classification
Technical Specifications
| Model | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| HY1603D/U/S | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250A | - | - | 62 | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS=62V, VGS=0V, TJ=85C | - | - | 30 | A | |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 1.5 | 1.9 | 2.5 | V | |
| Gate Leakage Current (IGSS) | VGS=20V, VDS=0V | - | - | 100 | nA | |
| Drain-Source On-state Resistance (RDS(ON)) | VGS=10V, IDS=31A | - | 4.0 | - | m | |
| Drain-Source On-state Resistance (RDS(ON)) | VGS=4.5V, IDS=31A | - | 6.0 | 8 | m | |
| Diode Forward Voltage (VSD) | ISD=31A, VGS=0V | - | 0.8 | - | V | |
| Total Gate Charge (Qg) | VDS=24V, VGS=10V, IDS=31A | - | 20 | - | nC | |
| Input Capacitance (Ciss) | VGS=0V, VDS=15V, Frequency=1.0MHz | - | 264 | - | pF | |
| Output Capacitance (Coss) | VGS=0V, VDS=15V, Frequency=1.0MHz | - | 71 | - | pF | |
| Common Ratings | Drain-Source Voltage (VDSS) | TC=25C Unless Otherwise Noted | - | - | 62 | V |
| Gate-Source Voltage (VGSS) | - | - | 20 | V | ||
| Maximum Junction Temperature (TJ) | - | - | 150 | C |
2411220407_HUAYI-HY1603D_C179753.pdf
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