Industrial Grade IGBT Module Infineon FS50R12KT4B15 Suitable for Auxiliary Inverters and Motor Drives
Key Attributes
Model Number:
FS50R12KT4B15
Product Custom Attributes
Td(off):
300ns
Pd - Power Dissipation:
280W
Td(on):
130ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.1nF
Input Capacitance(Cies):
2.8nF@25V
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2.15V@15V,50A
Gate Charge(Qg):
0.38uC
Operating Temperature:
-40℃~+150℃@(Tj)
Pulsed Current- Forward(Ifm):
100A
Switching Energy(Eoff):
2.5mJ
Turn-On Energy (Eon):
3.6mJ
Mfr. Part #:
FS50R12KT4B15
Package:
Through Hole,107.5x45mm
Product Description
IGBT Module FS50R12KT4_B15
The FS50R12KT4_B15 is an EconoPACK2 module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodes with an integrated NTC. It offers low VCEsat with a positive temperature coefficient, high power and thermal cycling capability, and an Al2O3 substrate with low thermal resistance. This module is suitable for auxiliary inverters, motor drives, and servo drives.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Al2O3 Substrate, Copper Base Plate
- Color: Not specified
- Certifications: UL approved (E83335)
Technical Specifications
| Parameter | Value | Unit | Condition |
|---|---|---|---|
| IGBT, Inverter | |||
| Collector-emitter voltage | 1200 | V | Tvj = 25C |
| Continuous DC collector current | 50 | A | TC = 95C, Tvj max = 175C |
| Repetitive peak collector current | 100 | A | tP = 1 ms |
| Total power dissipation | 280 | W | TC = 25C, Tvj max = 175C |
| Gate-emitter peak voltage | +/-20 | V | |
| Collector-emitter saturation voltage | 1.85 - 2.25 | V | IC = 50 A, VGE = 15 V, Tvj = 25C - 150C |
| Gate threshold voltage | 5.2 - 6.4 | V | IC = 1,60 mA, VCE = VGE, Tvj = 25C |
| Gate charge | 0.38 | C | VGE = -15 V ... +15 V |
| Internal gate resistor | 4.0 | Tvj = 25C | |
| Input capacitance | 2.80 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Reverse transfer capacitance | 0.10 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Collector-emitter cut-off current | 1.0 | mA | VCE = 1200 V, VGE = 0 V, Tvj = 25C |
| Gate-emitter leakage current | 100 | nA | VCE = 0 V, VGE = 20 V, Tvj = 25C |
| Turn-on delay time | 0.13 - 0.15 | s | IC = 50 A, VCE = 600 V, VGE = 15 V, RGon = 15 , Tvj = 25C - 150C |
| Rise time | 0.02 - 0.035 | s | IC = 50 A, VCE = 600 V, VGE = 15 V, RGon = 15 , Tvj = 25C - 150C |
| Turn-off delay time | 0.30 - 0.40 | s | IC = 50 A, VCE = 600 V, VGE = 15 V, RGoff = 15 , Tvj = 25C - 150C |
| Fall time | 0.045 - 0.09 | s | IC = 50 A, VCE = 600 V, VGE = 15 V, RGoff = 15 , Tvj = 25C - 150C |
| Turn-on energy loss per pulse | 3.60 - 5.80 | mJ | IC = 50 A, VCE = 600 V, LS = 25 nH, VGE = 15 V, di/dt = 2000 A/s, RGon = 15 , Tvj = 25C - 150C |
| Turn-off energy loss per pulse | 2.50 - 4.50 | mJ | IC = 50 A, VCE = 600 V, LS = 25 nH, VGE = 15 V, du/dt = 3800 V/s, RGoff = 15 , Tvj = 25C - 150C |
| Short circuit data | 180 | A | VGE 15 V, VCC = 800 V, VCEmax = VCES -LsCE di/dt, Tvj = 150C, tP 10 s |
| Thermal resistance, junction to case (per IGBT) | 0.54 | K/W | |
| Thermal resistance, case to heatsink (per IGBT) | 0.20 | K/W | Paste = 1 W/(mK) / grease = 1 W/(mK) |
| Temperature under switching conditions | -40 - 150 | C | Tvj op |
| Diode, Inverter | |||
| Repetitive peak reverse voltage | 1200 | V | Tvj = 25C |
| Continuous DC forward current | 50 | A | |
| Repetitive peak forward current | 100 | A | tP = 1 ms |
| It - value | 560 | As | VR = 0 V, tP = 10 ms, Tvj = 125C |
| Forward voltage | 1.65 - 2.15 | V | IF = 50 A, VGE = 0 V, Tvj = 25C - 150C |
| Peak reverse recovery current | 70.0 - 77.0 | A | IF = 50 A, - diF/dt = 2000 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 150C |
| Recovered charge | 5.50 - 10.0 | C | IF = 50 A, - diF/dt = 2000 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 150C |
| Reverse recovery energy | 1.70 - 3.60 | mJ | IF = 50 A, - diF/dt = 2000 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 150C |
| Thermal resistance, junction to case (per diode) | 0.81 | K/W | |
| Thermal resistance, case to heatsink (per diode) | 0.30 | K/W | Paste = 1 W/(mK) / grease = 1 W/(mK) |
| Temperature under switching conditions | -40 - 150 | C | Tvj op |
| NTC-Thermistor | |||
| Rated resistance | 5.00 | k | TC = 25C |
| Deviation of R100 | -5 - 5 | % | TC = 100C, R100 = 493 |
| Power dissipation | 20.0 | mW | TC = 25C |
| B-value (B25/50) | 3375 | K | |
| B-value (B25/80) | 3411 | K | |
| B-value (B25/100) | 3433 | K | |
| Module | |||
| Isolation test voltage | 2.5 | kV | RMS, f = 50 Hz, t = 1 min. |
| Material of module baseplate | Cu | ||
| Internal isolation | Al2O3 | Basic insulation (class 1, IEC 61140) | |
| Creepage distance (terminal to heatsink) | 10.0 | mm | |
| Creepage distance (terminal to terminal) | 10.0 | mm | |
| Clearance (terminal to heatsink) | 7.5 | mm | |
| Clearance (terminal to terminal) | 7.5 | mm | |
| Comparative tracking index | > 200 | ||
| Thermal resistance, case to heatsink (per module) | 0.02 | K/W | Paste = 1 W/(mK) / grease = 1 W/(mK) |
| Stray inductance module | 19 | nH | LsCE |
| Module lead resistance, terminals - chip (per switch) | 1.80 | m | TC = 25C |
| Storage temperature | -40 - 125 | C | Tstg |
| Mounting torque for module mounting (Screw M5) | 3.00 - 6.00 | Nm | |
| Weight | 180 | g | |
2410311206_Infineon-FS50R12KT4B15_C3190268.pdf
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