HXY MOSFET AOD409 HXY P Channel Enhancement Mode Device Designed for Low Gate Charge and High Current
Key Attributes
Model Number:
AOD409-HXY
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@10V,18A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
141pF@15V
Number:
1 P-Channel
Pd - Power Dissipation:
52.1W
Input Capacitance(Ciss):
3.635nF@15V
Gate Charge(Qg):
25nC@4.5V
Mfr. Part #:
AOD409-HXY
Package:
TO-252-2L
Product Description
Product Overview
The AOD409 is a P-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS, utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Model: AOD409
- Website: www.hxymos.com
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| VDS Drain-Source Voltage | -60 | V | |||
| VGS Gate-Source Voltage | ±20 | V | |||
| ID Continuous Drain Current @ TC=25, VGS @ 10V | -50 | A | |||
| ID Continuous Drain Current @ TC=100, VGS @ 10V | -27 | A | |||
| IDM Pulsed Drain Current | -70 | A | |||
| PD Total Power Dissipation @ TC=25 | 52.1 | W | |||
| TSTG Storage Temperature Range | -55 | 150 | |||
| TJ Operating Junction Temperature Range | -55 | 150 | |||
| RJA Thermal Resistance Junction-ambient | 62 | /W | |||
| RJC Thermal Resistance Junction-Case | 2.4 | /W | |||
| BVDSS Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | V | ||
| BVDSS/TJ BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.035 | V/ | ||
| RDS(ON) Static Drain-Source On-Resistance | VGS=-10V , ID=-18A | 20 | 24 | m | |
| RDS(ON) Static Drain-Source On-Resistance | VGS=-4.5V , ID=-12A | 30 | m | ||
| VGS(th) Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | |
| VGS(th) VGS(th) Temperature Coefficient | 4.28 | mV/ | |||
| IDSS Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=25 | 1 | uA | ||
| IDSS Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=55 | 5 | uA | ||
| IGSS Gate-Source Leakage Current | VGS=20V , VDS=0V | ±100 | nA | ||
| gfs Forward Transconductance | VDS=-10V , ID=-18A | 23 | S | ||
| Rg Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 7 | |||
| Qg Total Gate Charge | VDS=-20V , VGS=-4.5V , ID=-12A | 25 | nC | ||
| Qgs Gate-Source Charge | 6.7 | ||||
| Qgd Gate-Drain Charge | 5.5 | ||||
| Td(on) Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3, ID=-1A | 38 | ns | ||
| Tr Rise Time | 23.6 | ||||
| Td(off) Turn-Off Delay Time | 100 | ||||
| Tf Fall Time | 6.8 | ||||
| Ciss Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 3635 | pF | ||
| Coss Output Capacitance | 224 | ||||
| Crss Reverse Transfer Capacitance | 141 | ||||
| IS Continuous Source Current | VG=VD=0V , Force Current | -45 | A | ||
| ISM Pulsed Source Current | -70 | A | |||
| VSD Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | -1 | V |
2512231154_HXY-MOSFET-AOD409-HXY_C6285771.pdf
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