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quality Infineon IKP08N65H5 650V IGBT Featuring RAPID 1 Diode and TRENCHSTOP 5 Technology for Power Switching factory
quality Infineon IKP08N65H5 650V IGBT Featuring RAPID 1 Diode and TRENCHSTOP 5 Technology for Power Switching factory

Infineon IKP08N65H5 650V IGBT Featuring RAPID 1 Diode and TRENCHSTOP 5 Technology for Power Switching

Key Attributes
Model Number: IKP08N65H5
Product Custom Attributes
Pd - Power Dissipation:
70W
Td(off):
115ns
Td(on):
11ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
3pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@0.08mA
Gate Charge(Qg):
22nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
40ns
Switching Energy(Eoff):
30uJ
Turn-On Energy (Eon):
70uJ
Input Capacitance(Cies):
500pF
Pulsed Current- Forward(Ifm):
24A
Output Capacitance(Coes):
16pF
Mfr. Part #:
IKP08N65H5
Package:
TO-220-3
Product Description

Product Overview

The IKP08N65H5 is a high-speed 5th generation IGBT from Infineon's TRENCHSTOP 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. It offers best-in-class efficiency in hard switching and resonant topologies, serving as a plug-and-play replacement for previous generation IGBTs. With a 650V breakdown voltage and a maximum junction temperature of 175C, it is qualified according to JEDEC for target applications and is RoHS compliant.

Product Attributes

  • Brand: Infineon
  • Technology: TRENCHSTOP 5
  • Diode Type: RAPID 1
  • Lead Plating: Pb-free
  • Compliance: RoHS compliant

Technical Specifications

TypeVCEIC (TC=25C)VCEsat (Tvj=25C)TvjmaxMarkingPackage
IKP08N65H5650V18.0A1.65V175CK08EEH5PG-TO220-3
ParameterSymbolConditionsValueUnit
Collector-emitter breakdown voltageV(BR)CESVGE = 0V, IC = 0.20mA650V
Collector-emitter saturation voltageVCEsatVGE = 15.0V, IC = 8.0A, Tvj = 25C1.65V
Diode forward voltageVFVGE = 0V, IF = 9.0A, Tvj = 25C1.45V
Gate-emitter threshold voltageVGE(th)IC = 0.08mA, VCE = VGE3.2 - 4.8V
Zero gate voltage collector currentICESVCE = 650V, VGE = 0V, Tvj = 25C40.0A
Gate-emitter leakage currentIGESVCE = 0V, VGE = 20V100nA
TransconductancegfsVCE = 20V, IC = 8.0A17.0S
Input capacitanceCiesVCE = 25V, VGE = 0V, f = 1MHz500pF
Output capacitanceCoesVCE = 25V, VGE = 0V, f = 1MHz16pF
Reverse transfer capacitanceCresVCE = 25V, VGE = 0V, f = 1MHz3pF
Gate chargeQGVCC = 520V, IC = 8.0A, VGE = 15V22.0nC
Internal emitter inductanceLEmeasured 5mm from case7.0nH
Turn-on delay timetd(on)Tvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH11ns
Rise timetrTvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH5ns
Turn-off delay timetd(off)Tvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH115ns
Fall timetfTvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH15ns
Turn-on energyEonTvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH0.07mJ
Turn-off energyEoffTvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH0.03mJ
Total switching energyEtsTvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH0.10mJ
Diode reverse recovery timetrrTvj = 25C, VR = 400V, IF = 4.0A, diF/dt = 800A/s40ns
Diode reverse recovery chargeQrrTvj = 25C, VR = 400V, IF = 4.0A, diF/dt = 800A/s0.13C
Diode peak reverse recovery currentIrrmTvj = 25C, VR = 400V, IF = 4.0A, diF/dt = 800A/s6.8A
Diode peak rate of fall of reverse recovery currentdirr/dtTvj = 25C, VR = 400V, IF = 4.0A, diF/dt = 800A/s-220A/s
Turn-on delay timetd(on)Tvj = 150C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH10ns
Rise timetrTvj = 150C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH6ns
Turn-off delay timetd(off)Tvj = 150C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH145ns
Fall timetfTvj = 150C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH16ns
Turn-on energyEonTvj = 150C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH0.11mJ
Turn-off energyEoffTvj = 150C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH0.05mJ
Total switching energyEtsTvj = 150C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH0.16mJ
Diode reverse recovery timetrrTvj = 150C, VR = 400V, IF = 4.0A, diF/dt = 800A/s55ns
Diode reverse recovery chargeQrrTvj = 150C, VR = 400V, IF = 4.0A, diF/dt = 800A/s0.28C
Diode peak reverse recovery currentIrrmTvj = 150C, VR = 400V, IF = 4.0A, diF/dt = 800A/s7.7A
Diode peak rate of fall of reverse recovery currentdirr/dtTvj = 150C, VR = 400V, IF = 4.0A, diF/dt = 800A/s-145A/s

Applications

  • Solar converters
  • Uninterruptible power supplies
  • Welding converters
  • Mid to high range switching frequency converters

2410121815_Infineon-IKP08N65H5_C536189.pdf

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