Low RDS ON Dual P-Channel Enhancement Mode MOSFET HXY MOSFET SI4925BDY-T1-E3-HXY for PWM Applications
Key Attributes
Model Number:
SI4925BDY-T1-E3-HXY
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
156pF
Number:
2 P-Channel
Input Capacitance(Ciss):
1.33nF
Pd - Power Dissipation:
3.7W
Output Capacitance(Coss):
183pF
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
SI4925BDY-T1-E3-HXY
Package:
SOP-8
Product Description
SI4925BDY-T1-E3 Dual P-Channel Enhancement Mode MOSFET
The SI4925BDY-T1-E3 is a Dual P-Channel Enhancement Mode MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide variety of applications, particularly PWM applications and load switching.
Product Attributes
- Brand: HXY (Shenzhen HuaXuanYang Electronics CO.,LTD)
- Origin: China
- Package: SOP-8 (SOIC-8)
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| General Features | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Continuous Drain Current | ID | -11 | A | |||
| RDS(ON) @ VGS=-10V | RDS(ON) | VGS=-10V, ID=-10A | 14 | 18 | m | |
| RDS(ON) @ VGS=-4.5V | RDS(ON) | VGS=-4.5V, ID=-5A | 20 | 27 | m | |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (TA=25) | -30 | V | ||
| Gate-Source Voltage | VGS | (TA=25) | 20 | V | ||
| Drain Current-Continuous | ID | (TA=25) | -11 | A | ||
| Drain Current-Pulsed | IDM | (Note 1, TA=25) | -40 | A | ||
| Maximum Power Dissipation | PD | (TA=25) | 3.7 | W | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | (Note 2) | 33.8 | /W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250A | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | A | ||
| Gate to Body Leakage Current | IGSS | VDS=0V, VGS= 20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -1.0 | -1.6 | -2.5 | V |
| Static Drain-Source on-Resistance | RDS(on) | Note3, VGS=-10V, ID=-10A | 14 | 18 | m | |
| Static Drain-Source on-Resistance | RDS(on) | Note3, VGS=-4.5V, ID=-5A | 20 | 27 | m | |
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1.0MHz | 1330 | pF | ||
| Output Capacitance | Coss | VDS=-15V, VGS=0V, f=1.0MHz | 183 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-15V, VGS=0V, f=1.0MHz | 156 | pF | ||
| Total Gate Charge | Qg | VDS=-15V, ID=-5A, VGS=-10V | 22 | nC | ||
| Gate-Source Charge | Qgs | VDS=-15V, ID=-5A, VGS=-10V | 1.0 | nC | ||
| Gate-Drain(Miller) Charge | Qgd | VDS=-15V, ID=-5A, VGS=-10V | 1.8 | nC | ||
| Turn-on Delay Time | td(on) | VDD=-15V, ID=-10A, VGS=-10V, RGEN=2.5 | 9 | ns | ||
| Turn-on Rise Time | tr | VDD=-15V, ID=-10A, VGS=-10V, RGEN=2.5 | 13 | ns | ||
| Turn-off Delay Time | td(off) | VDD=-15V, ID=-10A, VGS=-10V, RGEN=2.5 | 48 | ns | ||
| Turn-off Fall Time | tf | VDD=-15V, ID=-10A, VGS=-10V, RGEN=2.5 | 20 | ns | ||
| Maximum Continuous Drain to Source Diode Forward Current | IS | -11 | A | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | -40 | A | |||
| Drain to Source Diode Forward Voltage | VSD | VGS=0V, IS=-15A | -0.8 | -1.2 | V | |
| Reverse Recovery Time | trr | TJ=25, VDD=-24V,IF=-2.8A, dI/dt=-100A/s | 64 | ns | ||
| Reverse Recovery Charge | Qrr | TJ=25, VDD=-24V,IF=-2.8A, dI/dt=-100A/s | 25 | nC | ||
2509181722_HXY-MOSFET-SI4925BDY-T1-E3-HXY_C22367190.pdf
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