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quality HXY MOSFET BSC0702LS HXY N Channel MOSFET optimized for power supply and motor control applications factory
quality HXY MOSFET BSC0702LS HXY N Channel MOSFET optimized for power supply and motor control applications factory

HXY MOSFET BSC0702LS HXY N Channel MOSFET optimized for power supply and motor control applications

Key Attributes
Model Number: BSC0702LS-HXY
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
125A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
132pF
Number:
1 N-channel
Input Capacitance(Ciss):
6.915nF
Output Capacitance(Coss):
3.282nF
Pd - Power Dissipation:
113W
Gate Charge(Qg):
111.56nC@10V
Mfr. Part #:
BSC0702LS-HXY
Package:
DFN5x6-8L
Product Description

BSC0702LS N-SGT Enhancement Mode MOSFET

The BSC0702LS is an N-Channel MOSFET utilizing advanced SGT technology, designed to deliver low RDS(ON), minimal gate charge, fast switching speeds, and excellent avalanche characteristics. This device offers enhanced ruggedness, making it suitable for various power supply and motor control applications, including consumer electronics, motor control, synchronous rectification, and isolated DC-DC converters.

Product Attributes

  • Brand: HUAXUANYANG ELECTRONICS CO.,LTD (HXY)
  • Origin: Shenzhen, China
  • Product ID: BSC0702LS
  • Package: DFN5X6-8L (TDSON-8-EP(5x6))
  • Ordering Information: BSC0702LS, Pack Marking: BSC0702LS, Qty(PCS): 5000

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Units
Absolute Maximum Ratings
VDS Drain-Source Voltage 60 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V TC=25 125 A
ID@TC=100 Continuous Drain Current, VGS @ 10V TC=100 101 A
IDM Pulsed Drain Current 641 A
EAS Single Pulse Avalanche Energy 189 mJ
PD@TC=25 Total Power Dissipation TC=25 113 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
RJC Thermal Resistance Junction-to-Case 1.11 /W
RJA Thermal Resistance Junction-to-Ambient 39.4 /W
Characteristics
V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250A 60 - - V
IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V - - 1.0 µA
IGSS Gate to Body Leakage Current VDS=0V, VGS=±20V - - ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.2 1.6 2.2 V
RDS(on) Static Drain-Source on-Resistance VGS=10V, ID=20A - 2.4 2.9 mΩ
Ciss Input Capacitance VDS=30V, VGS=0V, f=1.0MHz - 4610 6915 pF
Coss Output Capacitance VDS=30V, VGS=0V, f=1.0MHz - 2188 3282 pF
Crss Reverse Transfer Capacitance VDS=30V, VGS=0V, f=1.0MHz - 66 132 pF
Qg Total Gate Charge VDS=30V, ID=40A, VGS=10V - 74.37 - nC
Qgs Gate-Source Charge VDS=30V, ID=40A, VGS=10V - 17.26 - nC
Qgd Gate-Drain(Miller) Charge VDS=30V, ID=40A, VGS=10V - 9.44 - nC
td(on) Turn-on Delay Time V DD=30V, ID=40A, RG=2.7Ω,VGS=10V - - - ns
tr Turn-on Rise Time V DD=30V, ID=40A, RG=2.7Ω,VGS=10V - - - ns
td(off) Turn-off Delay Time V DD=30V, ID=40A, RG=2.7Ω,VGS=10V - - - ns
tf Turn-off Fall Time V DD=30V, ID=40A, RG=2.7Ω,VGS=10V - 105.07 - ns
IS Maximum Continuous Drain to Source Diode Forward Current - - 125 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 641 A
VSD Drain to Source Diode Forward Voltage VGS=0V, IS=40A - - 1.2 V
trr Body Diode Reverse Recovery Time TJ=25, IF=40A,dI/dt=100A/µs - 52.78 - ns
Qrr Body Diode Reverse Recovery Charge TJ=25, IF=40A,dI/dt=100A/µs - 56.31 - nC

2509181708_HXY-MOSFET-BSC0702LS-HXY_C20606289.pdf

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