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quality N Channel MOSFET HXY MOSFET 15N10 Featuring Low RDS ON and High Current Rating for Switching Circuits factory
quality N Channel MOSFET HXY MOSFET 15N10 Featuring Low RDS ON and High Current Rating for Switching Circuits factory

N Channel MOSFET HXY MOSFET 15N10 Featuring Low RDS ON and High Current Rating for Switching Circuits

Key Attributes
Model Number: 15N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
112mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
37pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
34.7W
Input Capacitance(Ciss):
1.535nF@15V
Gate Charge(Qg):
26.2nC@10V
Mfr. Part #:
15N10
Package:
TO-252-2L
Product Description

Product Overview

The 15N10 is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including power switching and DC/DC converters. Key features include VDS = 100V, ID = 15A, and RDS(ON) < 112m @ VGS=10V.

Product Attributes

  • Brand: HUAXUANYANG HXY
  • Manufacturer: Shenzhen HuaXuanYang Electronics CO.,LTD
  • Product ID: 15N10
  • Package Type: TO252-2L
  • Material: N-Channel Enhancement Mode MOSFET
  • Website: www.hxymos.com

Technical Specifications

Parameter Conditions Min. Typ. Max. Unit
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V 15 A
ID@TC=100 Continuous Drain Current, VGS @ 10V 7.7 A
ID@TA=25 Continuous Drain Current, VGS @ 10V 3 A
ID@TA=70 Continuous Drain Current, VGS @ 10V 2.4 A
IDM Pulsed Drain Current 24 A
EAS Single Pulse Avalanche Energy 6.1 mJ
IAS Avalanche Current 11 A
PD@TC=25 Total Power Dissipation 34.7 W
PD@TA=25 Total Power Dissipation 2 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
RJA Thermal Resistance Junction-ambient 62 /W
RJC Thermal Resistance Junction-Case 3.6 /W
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 V
RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=10A 100 112 m
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V , ID=8A 117 130
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 2.5 V
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25 1 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V ±100 nA
gfs Forward Transconductance VDS=5V , ID=10A 13 S
Qg Total Gate Charge (10V) VDS=80V , VGS=10V , ID=10A 26.2 nC
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz 1535 pF
Coss Output Capacitance VDS=15V , VGS=0V , f=1MHz 60 pF
Crss Reverse Transfer Capacitance VDS=15V , VGS=0V , f=1MHz 37 pF
IS Continuous Source Current VG=VD=0V , Force Current 12 A
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25 1.2 V
trr Reverse Recovery Time IF=10A , dI/dt=100A/µs , TJ=25 37 nS
qrr Reverse Recovery Charge IF=10A , dI/dt=100A/µs , TJ=25 27.3 nC

2509181606_HXY-MOSFET-15N10_C5451633.pdf

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