Dual N Channel Enhancement Mode MOSFET Huixin MMBT7002DW with Low RDS ON and High Saturation Current
Key Attributes
Model Number:
MMBT7002DW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
RDS(on):
7.5Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7.5pF
Number:
2 N-Channel
Output Capacitance(Coss):
9pF
Input Capacitance(Ciss):
22.5pF
Pd - Power Dissipation:
200mW
Gate Charge(Qg):
1.08nC@10V
Mfr. Part #:
MMBT7002DW
Package:
SOT-363
Product Description
MMBT7002DW Dual N-Channel Enhancement Mode MOSFET
The MMBT7002DW is a high-density cell design Dual N-Channel Enhancement Mode MOSFET offering low RDS(ON), voltage-controlled small signal switching, high saturation current capability, and high-speed switching. It is designed for various electronic applications requiring efficient and reliable MOSFET performance. This device is Halogen and Antimony Free (HAF) and RoHS compliant, ensuring environmental responsibility.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Plastic Package (SOT-363)
- Color: Not specified
- Certifications: Halogen and Antimony Free (HAF), RoHS compliant
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Absolute Maximum Ratings | VDSS | 60 | V | Drain Source Voltage |
| VDGR | 60 | V | Drain Gate Voltage (RGS ≤ 1 MΩ) | |
| VGSS | ± 20 / ± 40 | V | Gate Source Voltage (Continuous / Pulsed) | |
| ID | 115 | mA | Drain Current - Continuous | |
| IDM | 800 | mA | Peak Drain Current, Pulsed | |
| Ptot | 200 | mW | Total Power Dissipation | |
| TJ, Tstg | - 55 to + 150 | Operating and Storage Temperature Range | ||
| Thermal Characteristics | RθJA | 625 | /W | Thermal Resistance from Junction to Ambient |
| TJ(MAX) | 150 | °C | Pulse width limited by junction temperature | |
| Device mounted on FR-4 substrate PC board, with minimum recommended pad layout. | ||||
| Static Parameters | BVDSS | 60 | V | Drain Source Breakdown Voltage at ID = 10 µA |
| IDSS | 1 | µA | Zero Gate Voltage Drain Current at VDS = 60 V | |
| IGSS | ± 100 | nA | Gate Source Leakage Current at VGS = ± 20 V | |
| VGS(th) | 1 - 2.5 | V | Gate Source Threshold Voltage at VDS = VGS, ID = 250 µA | |
| RDS(ON) | 7.5 | Ω | Static Drain Source On Resistance at VGS = 10 V, ID = 500 mA | |
| VDS(ON) | 0.375 | V | Drain Source On Voltage at VGS = 5 V, ID = 50 mA | |
| 3.75 | V | Drain Source On Voltage at VGS = 10 V, ID = 500 mA | ||
| Q1 Pinout | 1.Source, 2.Gate, 6.Drain | |||
| Q2 Pinout | 3.Drain, 4.Source, 5.Gate | |||
| Dynamic Parameters | gFS | 80 | mS | Forward Transconductance at VDS = 10 V, ID = 200 mA |
| Ciss | 22.5 - 50 | pF | Input Capacitance at VDS = 25 V, f = 1 MHz | |
| Coss | 9 - 25 | pF | Output Capacitance at VDS = 25 V, f = 1 MHz | |
| Crss | 7.5 - 10 | pF | Reverse Transfer Capacitance at VDS = 25 V, f = 1 MHz | |
| Qg | 1.08 | nC | Total Gate Charge at VDS = 30 V, ID = 0.2 A , VGS = 10 V | |
| Switching Times | td(on) | 2.7 | ns | Turn On Time at VDD = 30 V, RL = 150 Ω, ID = 0.2 A, VGS = 10 V, RGEN = 25 Ω |
| tr | 17 | ns | Turn-On Rise Time at VDD = 30 V, RL = 150 Ω, ID = 0.2 A, VGS = 10 V, RGEN = 25 Ω | |
| td(off) | 8.5 | ns | Turn Off Time at VDD = 30 V, RL = 150 Ω, ID = 0.2 A, VGS = 10 V, RGEN = 25 Ω | |
| tf | 28 | ns | Turn-Off Fall Time at VDD = 30 V, RL = 150 Ω, ID = 0.2 A, VGS = 10 V, RGEN = 25 Ω | |
| Body-Diode Parameters | VSD | 1.2 | V | Drain-Source Diode Forward Voltage at VGS = 0 V, IS = 0.5 A |
| Marking | 6GMK | |||
| K72 |
2509051530_Huixin-MMBT7002DW_C51883376.pdf
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