HXY MOSFET BSC097N06NS HXY N Channel MOSFET with Excellent Switching Performance and Low Gate Charge
Key Attributes
Model Number:
BSC097N06NS-HXY
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
65A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
930pF@25V
Pd - Power Dissipation:
89W
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
BSC097N06NS-HXY
Package:
DFN-8(5x6)
Product Description
Product Overview
The BSC097N06NS is an N-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS
- Product ID: BSC097N06NS
- Marking: 097N06NS
- Website: www.hxymos.com
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current, VGS @ 10V | ID@TC=25 | 65 | A | |||
| Continuous Drain Current, VGS @ 10V | ID@TC=70 | 49 | A | |||
| Pulsed Drain Current | IDM | 2 | 180 | A | ||
| Single Pulse Avalanche Energy | EAS | 3 | 56 | mJ | ||
| Total Power Dissipation | PD@TC=25 | 4 | 89 | W | ||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Thermal Resistance Junction-Ambient | RJA | 1 | 62 | /W | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | - | - | 1.0 | A |
| Gate to Body Leakage Current | IGSS | VDS=0V, VGS= 20V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1.0 | 1.6 | 2.5 | V |
| Static Drain-Source on-Resistance | RDS(on) | VGS=10V, ID=20A 3 | - | 8 | 11 | m |
| Static Drain-Source on-Resistance | RDS(on) | VGS=4.5V, ID=10A 3 | - | 14 | 20 | m |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | - | 930 | - | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | - | 370 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | - | 20 | - | pF |
| Total Gate Charge | Qg | VDS=30V, ID=20A, VGS=10V | - | 19 | - | nC |
| Gate-Source Charge | Qgs | VDS=30V, ID=20A, VGS=10V | - | 4.8 | - | nC |
| Gate-Drain(Miller) Charge | Qgd | VDS=30V, ID=20A, VGS=10V | - | 4.5 | - | nC |
| Turn-on Delay Time | td(on) | VDD=30V, ID=20A, RG=1.6, VGS=10V | - | 4.9 | - | ns |
| Turn-on Rise Time | tr | VDD=30V, ID=20A, RG=1.6, VGS=10V | - | 31 | - | ns |
| Turn-off Delay Time | td(off) | VDD=30V, ID=20A, RG=1.6, VGS=10V | - | 23 | - | ns |
| Turn-off Fall Time | tf | VDD=30V, ID=20A, RG=1.6, VGS=10V | - | 8.7 | - | ns |
| Maximum Continuous Drain to Source Diode Forward Current | IS | - | - | 65 | A | |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | - | - | 240 | A | |
| Drain to Source Diode Forward Voltage | VSD | VGS=0V, IS=30A | - | - | 1.4 | V |
| Body Diode Reverse Recovery Time | trr | TJ=25, IF=20A,dI/dt=100A/s | - | 34 | - | ns |
| Body Diode Reverse Recovery Charge | Qrr | TJ=25, IF=20A,dI/dt=100A/s | - | 14 | - | nC |
Package Information
| SYMBOL | MM | INCH | ||||
| BSC097N06NS DFN5X6-8L(TDSON-8-EP(5.1x5.9)) | MIN | NOM | MAX | MIN | NOM | MAX |
| A | 4.95 | 5 | 5.05 | 0.195 | 0.197 | 0.199 |
| A1 | 4.82 | 4.9 | 4.98 | 0.190 | 0.193 | 0.196 |
| D | 5.98 | 6 | 6.02 | 0.235 | 0.236 | 0.237 |
| D1 | 5.67 | 5.75 | 5.83 | 0.223 | 0.226 | 0.230 |
| B | 0.9 | 0.95 | 1 | 0.035 | 0.037 | 0.039 |
| B1 | 0.190 | 0.193 | 0.196 | |||
| C | 3.95 | 4 | 4.05 | 0.156 | 0.157 | 0.159 |
| C1 | 0.35 | 0.4 | 0.45 | 0.014 | 0.016 | 0.018 |
| C2 | 0.010 | 0.010 | 0.010 | |||
| 1 | 8 | 10 | 12 | 8 | 10 | 12 |
| L1 | 0.63 | 0.64 | 0.65 | 0.025 | 0.025 | 0.026 |
| L2 | 1.2 | 1.3 | 1.4 | 0.047 | 0.051 | 0.055 |
| L3 | 3.415 | 3.42 | 3.425 | 0.134 | 0.135 | 0.135 |
| H | 0.24 | 0.25 | 0.26 | 0.009 | 0.010 | 0.010 |
| 1.27TYP | 0.050TYP | |||||
| 0.5TYP | 0.020TYP | |||||
| 0.254REF | 0.010REF |
2509181706_HXY-MOSFET-BSC097N06NS-HXY_C20606225.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
