Durable Huixin H10N65F 650V N Channel MOSFET designed for power conversion in SMPS and charger units
Key Attributes
Model Number:
H10N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
10A
RDS(on):
800mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.62nF
Output Capacitance(Coss):
140pF
Pd - Power Dissipation:
32W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
H10N65F
Package:
TO-220F
Product Description
Product Overview
The H10N65F is a 650V N-Channel MOSFET designed for high-efficiency power applications. It features fast switching speeds, 100% avalanche tested, improved dv/dt capability, and enhanced avalanche ruggedness. This MOSFET is ideal for use in Switch Mode Power Supplies (SMPS), adapters, chargers, and AC-DC switching power supplies.
Product Attributes
- Brand: H (implied by product code H10N65F)
- Origin: China (implied by +86 phone prefix)
- Certifications: Lead Free
Technical Specifications
| Part Number | Package | Drain-to-Source Voltage (VDS) | Continuous Drain Current (TC=25) (ID) | Continuous Drain Current (TC=100) (ID) | Pulsed Drain Current (IDM) | Power Dissipation (PD) | Gate-to-Source Voltage (VGS) | Static Drain-to-Source On-Resistance (RDS(on)) | Operating Junction and Storage Temperature Range (TJ, TSTG) |
| H10N65F | TO-220F | 650 V | 10 A | 6 A | 10 A | 32 W | 30 V | 0.8 (Typ) | -55 to 150 |
| Symbol | Parameter | Min. | Typ. | Max. | Units | Test Conditions |
| V(BR)DSS | Drain- Source Breakdown Voltage | 650 | -- | -- | V | VGS=0V,ID=250A |
| IDSS | Zero Gate Voltage Drain Current (25) | -- | -- | 1 | A | VDS=650V,VGS=0V |
| IDSS | Zero Gate Voltage Drain Current (100) | -- | -- | 100 | A | VDS=650V,VGS=0V |
| IGSS | Gate to Source Forward Leakage | -- | -- | 100 | nA | VGS=30V ,VDS=0V |
| IGSS | Gate to Source Reverse Leakage | -- | -- | -100 | nA | VGS=-30V ,VDS=0V |
| VGS(TH) | Gate Threshold Voltage | 2 | -- | 4 | V | VGS=VDS,ID=250A |
| RDS(on) | Static Drain- to- Source On- Resistance | -- | 0.8 | 1.0 | VGS=10V,ID=5A | |
| Ciss | Input Capacitance | -- | 1620 | -- | pF | VGS=0V VDS=25V f=1MHz |
| Coss | Output Capacitance | -- | 140 | -- | pF | VGS=0V VDS=25V f=1MHz |
| Crss | Reverse Transfer Capacitance | -- | 7 | -- | pF | VGS=0V VDS=25V f=1MHz |
| Qg | Total Gate Charge | -- | 35 | -- | nC | VDS=520V ID=10A VGS=10V |
| Qgs | Gate- to- Source Charge | -- | 9 | -- | nC | VDS=520V ID=10A VGS=10V |
| Qgd | Gate-to-Drain(" Miller") Charge | -- | 13 | -- | nC | VDS=520V ID=10A VGS=10V |
| td(ON) | Turn- on Delay Time | -- | 16 | -- | nS | VDS=325V ID=10A VGS=10V |
| trise | Rise Time | -- | 34 | -- | nS | VDS=325V ID=10A VGS=10V |
| td(OFF) | Turn- OFF Delay Time | -- | 65 | -- | nS | VDS=325V ID=10A VGS=10V |
| tfall | Fall Time | -- | 16 | -- | nS | VDS=325V ID=10A VGS=10V |
| VSD | Diode Forward Voltage | -- | -- | 1.4 | V | IF=10A,VGS=0V |
| trr | Reverse Recovery Time | -- | 418 | -- | nS | VGS=0V,IF=10A di/dt=100A/s |
| Qrr | Reverse Recovery Charge | -- | 3.4 | -- | uC | VGS=0V,IF=10A di/dt=100A/s |
| Symbol | Parameter | Rating | Units | Conditions |
| EAS | Single Pulse Avalanche Engergy | 500 | mJ | L = 10mH, RG = 25 ,TC=25 |
| RJC | Thermal Resistance Junction-Case | 3.13 | / W | -- |
| RJA | Thermal Resistance Junction-Ambient | 110 | / W | -- |
2508041620_Huixin-H10N65F_C49823498.pdf
Related Products
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
