Power module Infineon FP75R12N2T7 EconoPIM2 with industrial certifications and solder contact technology
Key Attributes
Model Number:
FP75R12N2T7
Product Custom Attributes
Pd - Power Dissipation:
-
Td(off):
320ns
Td(on):
146ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
-
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.15V@1.28mA
Gate Charge(Qg):
1.25uC@600V,15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
-
Switching Energy(Eoff):
4.95mJ
Turn-On Energy (Eon):
8.05mJ
Input Capacitance(Cies):
15.1nF@25V
Pulsed Current- Forward(Ifm):
-
Output Capacitance(Coes):
-
Mfr. Part #:
FP75R12N2T7
Package:
Through Hole,107.5x45mm
Product Description
EconoPIM2 Module with TRENCHSTOP IGBT7 and Emitter Controlled 7 Diode and NTC
The FP75R12N2T7 EconoPIM2 module integrates TRENCHSTOP IGBT7 and Emitter Controlled 7 diode technology, offering high power and thermal cycling capability. It features a low VCEsat and supports overload operation up to 175C. Designed for industrial applications, this module is qualified according to IEC 60747, 60749, and 60068 standards. Its construction includes a copper base plate and an Al2O3 substrate with low thermal resistance, utilizing solder contact technology.
Product Attributes
- Brand: Infineon
- Product Line: EconoPIM2
- IGBT Technology: TRENCHSTOP IGBT7
- Diode Technology: Emitter Controlled 7
- Substrate Material: Al2O3
- Base Plate Material: Copper
- Certifications: Qualified for industrial applications according to IEC 60747, 60749 and 60068
Technical Specifications
| Parameter | Symbol | Note or test condition | Values | Unit |
|---|---|---|---|---|
| General Module Characteristics | ||||
| Isolation test voltage | VISOL | RMS, f = 50 Hz, t = 1 min | 2.5 | kV |
| Internal Isolation | basic insulation (class 1, IEC 61140) | |||
| Creepage distance | dCreep | terminal to heatsink | 10.0 | mm |
| Clearance | dClear | terminal to heatsink | 7.5 | mm |
| Comparative tracking index | CTI | > 200 | ||
| RTI Elec. | 140 C | |||
| Stray inductance module | LsCE | 35 | nH | |
| Module lead resistance, terminals - chip | RAA'+CC' | TC=25C, per switch | 5.6 | m |
| Module lead resistance, terminals - chip | RCC'+EE' | TC=25C, per switch | 5.3 | m |
| Storage temperature | Tstg | -40 to 125 | C | |
| Mounting torque for modul mounting | M | M5, Screw | 3 to 6 | Nm |
| Weight | G | 180 | g | |
| IGBT, Inverter | ||||
| Collector-emitter voltage | VCES | Tvj = 25 C | 1200 | V |
| Continous DC collector current | ICDC | Tvj max = 175 C, TC = 100 C | 75 | A |
| Repetitive peak collector current | ICRM | tP = 1 ms | 150 | A |
| Gate-emitter peak voltage | VGES | 20 | V | |
| Collector-emitter saturation voltage | VCE sat | IC = 75 A, VGE = 15 V | 1.55 (Tvj=25C), 1.69 (Tvj=125C), 1.77 (Tvj=175C) | V |
| Gate threshold voltage | VGEth | IC = 1.28 mA, VCE = VGE, Tvj = 25 C | 5.15 to 6.45 | V |
| Gate charge | QG | VGE = 15 V, VCE = 600 V | 1.25 | C |
| Internal gate resistor | RGint | Tvj = 25 C | 2 | |
| Input capacitance | Cies | f = 100 kHz, Tvj = 25 C, VCE = 25 V, VGE = 0 V | 15.1 | nF |
| Reverse transfer capacitance | Cres | f = 100 kHz, Tvj = 25 C, VCE = 25 V, VGE = 0 V | 0.053 | nF |
| Collector-emitter cut-off current | ICES | VCE = 1200 V, VGE = 0 V, Tvj = 25 C | 0.014 | mA |
| Gate-emitter leakage current | IGES | VCE = 0 V, VGE = 20 V, Tvj = 25 C | 100 | nA |
| Turn-on delay time (inductive load) | tdon | IC = 75 A, VCE = 600 V, VGE = 15 V, RGon = 5.6 | 0.146 (Tvj=25C), 0.162 (Tvj=125C), 0.169 (Tvj=175C) | s |
| Rise time (inductive load) | tr | IC = 75 A, VCE = 600 V, VGE = 15 V, RGon = 5.6 | 0.053 (Tvj=25C), 0.057 (Tvj=125C), 0.060 (Tvj=175C) | s |
| Turn-off delay time (inductive load) | tdoff | IC = 75 A, VCE = 600 V, VGE = 15 V, RGoff = 5.6 | 0.320 (Tvj=25C), 0.390 (Tvj=125C), 0.440 (Tvj=175C) | s |
| Fall time (inductive load) | tf | IC = 75 A, VCE = 600 V, VGE = 15 V, RGoff = 5.6 | 0.110 (Tvj=25C), 0.200 (Tvj=125C), 0.270 (Tvj=175C) | s |
| Turn-on energy loss per pulse | Eon | IC = 75 A, VCE = 600 V, L = 35 nH, VGE = 15 V, RGon = 5.6 , di/dt = 1050 A/s | 8.05 (Tvj=25C), 10.6 (Tvj=125C), 12.3 (Tvj=175C) | mJ |
| Turn-off energy loss per pulse | Eoff | IC = 75 A, VCE = 600 V, L = 35 nH, VGE = 15 V, RGoff = 5.6 , dv/dt = 3150 V/s | 4.95 (Tvj=25C), 7.76 (Tvj=125C), 9.51 (Tvj=175C) | mJ |
| SC data | ISC | VGE 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt, tP 8 s | 260 (Tvj=150C), 250 (Tvj=175C) | A |
| Thermal resistance, junction to case | RthJC | per IGBT | 0.475 | K/W |
| Thermal resistance, case to heatsink | RthCH | per IGBT, grease= 1 W/(m*K) | 0.141 | K/W |
| Temperature under switching conditions | Tvj op | -40 to 175 | C | |
| Diode, Inverter | ||||
| Repetitive peak reverse voltage | VRRM | Tvj = 25 C | 1200 | V |
| Continous DC forward current | IF | 75 | A | |
| Repetitive peak forward current | IFRM | tP = 1 ms | 150 | A |
| I2t - value | I2t | tP = 10 ms, VR = 0 V | 1150 (Tvj=125C), 740 (Tvj=175C) | As |
| Forward voltage | VF | IF = 75 A, VGE = 0 V | 1.72 (Tvj=25C), 1.59 (Tvj=125C), 1.52 (Tvj=175C) | V |
| Peak reverse recovery current | IRM | VR = 600 V, IF = 75 A, VGE = -15 V, -diF/dt = 1050 A/s | 38 (Tvj=25C), 51 (Tvj=125C), 59 (Tvj=175C) | A |
| Recovered charge | Qr | VR = 600 V, IF = 75 A, VGE = -15 V, -diF/dt = 1050 A/s | 5.43 (Tvj=25C), 10.4 (Tvj=125C), 14.1 (Tvj=175C) | C |
| Reverse recovery energy | Erec | VR = 600 V, IF = 75 A, VGE = -15 V, -diF/dt = 1050 A/s | 1.79 (Tvj=25C), 3.5 (Tvj=125C), 4.83 (Tvj=175C) | mJ |
| Thermal resistance, junction to case | RthJC | per diode | 0.708 | K/W |
| Thermal resistance, case to heatsink | RthCH | per diode, grease= 1 W/(m*K) | 0.153 | K/W |
| Temperature under switching conditions | Tvj op | -40 to 175 | C | |
| Diode, Rectifier | ||||
| Repetitive peak reverse voltage | VRRM | Tvj = 150 C | 1600 | V |
| Maximum RMS forward current per chip | IFRMSM | TC = 95 C | 75 | A |
| Maximum RMS current at rectifier output | IRMSM | TC = 95 C | 100 | A |
| Surge forward current | IFSM | tP = 10 ms | 745 (Tvj=25C), 515 (Tvj=150C) | A |
| I2t - value | I2t | tP = 10 ms | 2780 (Tvj=25C), 1330 (Tvj=150C) | As |
| Forward voltage | VF | Tvj = 150 C, IF = 75 A | 1.06 | V |
| Reverse current | Ir | Tvj = 150 C, VR = 1600 V | 1 | mA |
| Thermal resistance, junction to case | RthJC | per diode | 0.697 | K/W |
| Thermal resistance, case to heatsink | RthCH | per diode, Paste= 1 W /(m*K) / grease= 1 W/(m*K) | 0.153 | K/W |
| NTC-Thermistor | ||||
| Temperature sensor | NTC | Integrated | ||
2504101957_Infineon-FP75R12N2T7_C45898807.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
