Silicon Carbide MOSFET HXY MOSFET HC3M0045065K1 with Fast Intrinsic Diode and Minimized Gate Ringing
Key Attributes
Model Number:
HC3M0045065K1
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
49A
RDS(on):
33mΩ@20V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
19pF
Pd - Power Dissipation:
242W
Input Capacitance(Ciss):
1.823nF
Output Capacitance(Coss):
190pF
Gate Charge(Qg):
96nC
Mfr. Part #:
HC3M0045065K1
Package:
TO-247-4L
Product Description
Product Overview
The HC3M0045065K1 is a 3rd generation SiC MOSFET from HUAXUANYANG HXY ELECTRONICS CO.,LTD, featuring an optimized package with a separate driver source pin. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery. This MOSFET is designed to reduce switching losses, minimize gate ringing, increase system efficiency, lower cooling requirements, boost power density, and enable higher system switching frequencies. It is halogen-free and RoHS compliant.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Material: SiC (Silicon Carbide)
- Certifications: Halogen free, RoHS compliant
Technical Specifications
| Parameter | Symbol | Test Condition | Value | Unit |
| Maximum Ratings | ||||
| Drain-source voltage | VDS | 650 | V | |
| Continuous drain current | ID | TC = 25C | 123 | A |
| Continuous drain current | ID | TC = 100C | 49 | A |
| Pulsed drain current | ID pulse | TC = 25C, tp limited by Tjmax | 53 | A |
| Gate-Source voltage | VGS | -5/+20 | V | |
| Power dissipation | Ptot | TC = 25C | 242 | W |
| Operating junction and storage temperature | Tj , Tstg | -55...+175 | C | |
| Avalanche energy, single pulse | EAS | L=10mH | 1000 | mJ |
| Gate-Source voltagedynamic,Absolute maximum values | VGSmax | -10/+25 | V | |
| Thermal Resistance | ||||
| Thermal resistance, junction case. Max | RthJC | 0.62 | C/W | |
| Thermal resistance, junction ambient. Max | RthJA | 40 | C/W | |
| Static Characteristic | ||||
| Drain-source on-state resistance | RDS(on) | VGS=20V, ID=17.6A, Tj=25C | 45 | m |
| Drain-source on-state resistance | RDS(on) | VGS=20V, ID=17.6A, Tj=175C | 48 | m |
| Gate threshold voltage | VGS(th) | VDS=VGS,ID=7mA | 4 | V |
| Zero gate voltage drain current | IDSS | VDS=650V,VGS=0V | 250 | A |
| Zero gate voltage drain current | IDSS | VDS=650V,VGS=0V, Tj=175C | 1 | mA |
| Gate-source leakage current | IGSS | VGS=20V | 10 | nA |
| Drain-source breakdown voltage | BVDSS | VGS=0V, ID=250uA | 650 | V |
| Dynamic Characteristic | ||||
| Input Capacitance | Ciss | VDS = 650V VGS = 0V TJ = 25C VAC = 25mV f = 1MHz | 1823 | pF |
| Output Capacitance | Coss | VDS = 650V VGS = 0V TJ = 25C VAC = 25mV f = 1MHz | 156 | pF |
| Reverse Transfer Capacitance | Crss | VDS = 650V VGS = 0V TJ = 25C VAC = 25mV f = 1MHz | 40 | pF |
| Gate Total Charge | QG | VDD = 400V VGS = -5/+20V ID = 17.6A | 190 | nC |
| Turn-on delay time | td(on) | VGS=18V, ID=17.6A, RG = 10 L = 100uH | 19 | ns |
| Rise time | tr | VGS=18V, ID=17.6A, RG = 10 L = 100uH | 26 | ns |
| Turn-off delay time | td(off) | VGS=18V, ID=17.6A, RG = 10 L = 100uH | 15 | ns |
| Fall time | tf | VGS=18V, ID=17.6A, RG = 10 L = 100uH | 17.6 | ns |
| Turn-On Switching Energy | EON | VDS = 400V VGS = -5/20V ID = 17.6A | 188 | J |
| Turn-Off Switching Energy | EOFF | VDS = 400V VGS = -5/20V ID = 17.6A | 156 | J |
| Body Diode Characteristic | ||||
| Body Diode Forward Voltage | VSD | VGS=0V,ISD=8.8A, TJ=25C | 1.7 | V |
| Body Diode Forward Voltage | VSD | VGS=0V,ISD=8.8A, TJ=175C | 3.2 | V |
| Body Diode Reverse Recovery Time | trr | VR = 400V, ID = 17.6A di/dt = 1000A/S | 33 | ns |
| Body Diode Reverse Recovery Charge | Qrr | VR = 400V, ID = 17.6A di/dt = 1000A/S | 49 | nC |
Applications
- Renewable energy
- EV battery chargers
- High voltage DC/DC converters
- Switch Mode Power Supplies
2509181538_HXY-MOSFET-HC3M0045065K1_C22449547.pdf
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