insulated gate bipolar transistor Infineon IRGP4066DPBF with low switching losses and ultrafast diode
Key Attributes
Model Number:
IRGP4066DPBF
Product Custom Attributes
Td(off):
200ns
Pd - Power Dissipation:
454W
Td(on):
150ns
Collector-Emitter Breakdown Voltage (Vces):
600V
Reverse Transfer Capacitance (Cres):
130pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@-
Operating Temperature:
-55℃~+175℃
Gate Charge(Qg):
150nC@15V
Reverse Recovery Time(trr):
155ns
Switching Energy(Eoff):
2.155mJ
Turn-On Energy (Eon):
2.465mJ
Input Capacitance(Cies):
4.44nF
Pulsed Current- Forward(Ifm):
300A
Output Capacitance(Coes):
2420pF
Mfr. Part #:
IRGP4066DPBF
Package:
TO-247AC
Product Description
Product Overview
The IRGP4066DPbF and IRGP4066D-EPbF are n-channel Insulated Gate Bipolar Transistors (IGBTs) featuring ultrafast soft recovery diodes. Designed with low VCE(ON) Trench IGBT Technology, these devices offer low switching losses and high efficiency across a wide range of applications. They are suitable for various switching frequencies and provide robust transient performance for enhanced reliability. The IGBTs also exhibit excellent current sharing capabilities in parallel operation.
Product Attributes
- Brand: Infineon (implied by www.irf.com)
- Package Type: TO-247AC (IRGP4066DPbF), TO-247AD (IRGP4066D-EPbF)
- Lead Free Package: Yes
Technical Specifications
| Parameter | IRGP4066DPbF / IRGP4066D-EPbF | Units | Conditions |
| VCES Collector-to-Emitter Voltage | 600 | V | |
| IC(Nominal) Continuous Collector Current | 75 | A | Nominal Current |
| IC @ TC = 25C Continuous Collector Current | 140 | A | |
| IC @ TC = 100C Continuous Collector Current | 90 | A | |
| ICM Pulse Collector Current | 225 | A | VGE = 15V |
| ILM Clamped Inductive Load Current | 300 | A | VGE = 20V |
| IF @ TC = 25C Diode Continuous Forward Current | 140 | A | |
| IF @ TC = 100C Diode Continuous Forward Current | 90 | A | |
| IFM Diode Maximum Forward Current | 300 | A | |
| VGE Continuous Gate-to-Emitter Voltage | ±20 | V | |
| VGE Transient Gate-to-Emitter Voltage | ±30 | V | |
| PD @ TC = 25C Maximum Power Dissipation | 454 | W | |
| PD @ TC = 100C Maximum Power Dissipation | 227 | W | |
| TJ Operating Junction Temperature | -55 to +175 | °C | |
| TSTG Storage Temperature Range | -55 to +175 | °C | |
| Soldering Temperature, for 10 sec. | 300 | °C | (0.063 in. (1.6mm) from case) |
| Mounting Torque, 6-32 or M3 Screw | 10 | lbf·in (1.1 N·m) | |
| RJC (IGBT) Thermal Resistance Junction-to-Case | 0.33 | °C/W | (each IGBT) |
| RJC (Diode) Thermal Resistance Junction-to-Case | 1.0 | °C/W | (each Diode) |
| RCS Thermal Resistance, Case-to-Sink | 0.24 | °C/W | (flat, greased surface) |
| RJA Thermal Resistance, Junction-to-Ambient | 40 | °C/W | (typical socket mount) |
| V(BR)CES Collector-to-Emitter Breakdown Voltage | 600 | V | VGE = 0V, IC = 100µA |
| ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage | 0.30 | V/°C | VGE = 0V, IC = 2.0mA (25°C-175°C) |
| VCE(on) Collector-to-Emitter Saturation Voltage | 1.70 (typ) | V | IC = 75A, VGE = 15V, TJ = 25°C |
| VGE(th) Gate Threshold Voltage | 4.0 to 6.5 | V | VCE = VGE, IC = 2.1mA |
| ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient | -21 | mV/°C | VCE = VGE, IC = 2.1mA (25°C - 175°C) |
| gfe Forward Transconductance | 50 | S | VCE = 50V, IC = 75A, PW = 60µs |
| ICES Collector-to-Emitter Leakage Current | 100 | µA | VGE = 0V, VCE = 600V, TJ = 175°C |
| VFM Diode Forward Voltage Drop | 2.23 (typ) | V | IF = 75A, TJ = 25°C |
| IGES Gate-to-Emitter Leakage Current | ±200 | nA | VGE = ±20V |
| Qg Total Gate Charge | 150 to 225 | nC | IC = 75A, VGE = 15V |
| Qge Gate-to-Emitter Charge | 40 to 60 | nC | VGE = 15V |
| Qgc Gate-to-Collector Charge | 60 to 90 | nC | VCC = 400V |
| Eon Turn-On Switching Loss | 2465 to 3360 | µJ | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 25°C |
| Eoff Turn-Off Switching Loss | 2155 to 3040 | µJ | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 25°C |
| Etotal Total Switching Loss | 4620 to 6400 | µJ | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 25°C |
| td(on) Turn-On delay time | 50 to 70 | ns | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 25°C |
| tr Rise time | 70 to 90 | ns | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 25°C |
| td(off) Turn-Off delay time | 200 to 225 | ns | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 25°C |
| tf Fall time | 60 to 80 | ns | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 25°C |
| Eon Turn-On Switching Loss | 3870 | µJ | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 175°C |
| Eoff Turn-Off Switching Loss | 2815 | µJ | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 175°C |
| Etotal Total Switching Loss | 6685 | µJ | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 175°C |
| td(on) Turn-On delay time | 50 | ns | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 175°C |
| tr Rise time | 70 | ns | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 175°C |
| td(off) Turn-Off delay time | 240 | ns | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 175°C |
| tf Fall time | 70 | ns | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 175°C |
| Cies Input Capacitance | 4440 | pF | VGE = 0V, f = 1.0MHz |
| Coes Output Capacitance | 245 | pF | VGE = 0V, f = 1.0MHz |
| Cres Reverse Transfer Capacitance | 130 | pF | VGE = 0V, f = 1.0MHz |
| RBSOA Reverse Bias Safe Operating Area | FULL SQUARE | VCC = 480V, Vp = 600V, Rg = 10Ω, VGE = +20V to 0V | |
| SCSOA Short Circuit Safe Operating Area | 5 | µs | VCC = 400V, Vp = 600V, Rg = 10Ω, VGE = +15V to 0V |
| Erec Reverse Recovery Energy of the Diode | 470 | µJ | TJ = 175°C |
| trr Diode Reverse Recovery Time | 155 | ns | VCC = 400V, IF = 75A, VGE = 15V, Rg = 10Ω, L = 60µH |
| Irr Peak Reverse Recovery Current | 27 | A | VCC = 400V, IF = 75A, VGE = 15V, Rg = 10Ω, L = 60µH |
2410010132_Infineon-IRGP4066DPBF_C500537.pdf
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