Switching Device HXY MOSFET 2N7002T N Channel Enhancement Mode with Low On Resistance and Gate Charge
Key Attributes
Model Number:
2N7002T
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3Ω@10V,0.115A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
50pF@25V
Pd - Power Dissipation:
150mW
Mfr. Part #:
2N7002T
Package:
SOT-523
Product Description
Product Overview
The 2N7002T is an N-Channel Enhancement Mode MOSFET from HUAXUANYANG (HXY) that utilizes advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is suitable for battery protection and general switching applications.
Product Attributes
- Brand: HUAXUANYANG (HXY)
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0 V, ID=250 A | 60 | V | ||
| Gate-Threshold Voltage | Vth(GS) | VDS=VGS, ID=250 A | 1 | 2.5 | V | |
| Gate-body Leakage | lGSS | VDS=0 V, VGS=20 V | 80 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60 V, VGS=0 V | 80 | nA | ||
| On-state Drain Current | ID(ON) | VGS=10 V, VDS=7 V | 500 | mA | ||
| Drain-Source On-Resistance | RDS(on) | VGS=10 V, ID=115mA | 3 | |||
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V, ID=50mA | 5 | |||
| Forward Trans conductance | gfs | VDS=10 V, ID=200mA | 80 | 500 | mS | |
| Drain-source on-voltage | VDS(on) | VGS=10V, ID=500mA | 3.75 | V | ||
| Drain-source on-voltage | VDS(on) | VGS=5V, ID=50mA | 0.375 | V | ||
| Diode Forward Voltage | VSD | IS=115mA, VGS=0 V | 0.55 | 1.2 | V | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 50 | pF | ||
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1MHz | 25 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1MHz | 5 | pF | ||
| Turn-on Time | td(on) | VDD=25 V, RL=50 ID=500mA,VGEN=10 V RG=25 | 20 | ns | ||
| Turn-off Time | td(off) | VDD=25 V, RL=50 ID=500mA,VGEN=10 V RG=25 | 40 | ns |
2509181612_HXY-MOSFET-2N7002T_C7507460.pdf
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