power transistor Infineon IKWH20N65WR6 with trenchstop 5 wr6 technology and enhanced creepage package
Key Attributes
Model Number:
IKWH20N65WR6
Product Custom Attributes
Pd - Power Dissipation:
140W
Td(off):
255ns
Td(on):
25ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
9pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@0.2mA
Gate Charge(Qg):
89nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
89ns
Switching Energy(Eoff):
200uJ
Turn-On Energy (Eon):
500uJ
Input Capacitance(Cies):
2.13nF
Pulsed Current- Forward(Ifm):
30A
Output Capacitance(Coes):
22pF
Mfr. Part #:
IKWH20N65WR6
Package:
TO-247-3
Product Description
Product Overview
The TRENCHSTOP 5 WR6 technology in an enhanced creepage and clearance package offers improved reliability against package contamination. It features a monolithic diode optimized for PFC and welding applications, stable temperature behavior, very low VCEsat, and low Eoff. The product also boasts easy parallel switching capability due to the positive temperature coefficient of VCEsat and low temperature dependence of VCEsat and Esw.
Product Attributes
- Brand: TRENCHSTOP
- Technology: WR6
- Package Type: Enhanced creepage and clearance package
- Certifications: Qualified for industrial applications according to JEDEC47/20/22
Technical Specifications
| Parameter | Symbol | Note or test condition | Values Unit | Min. | Typ. | Max. |
| IGBT | ||||||
| Collector-emitter voltage | VCE | Tvj 25 C | 650 V | |||
| DC collector current, limited by Tvjmax | IC | Tc = 25 C | 55 A | |||
| Tc = 100 C | 35 A | |||||
| Pulsed collector current, tp limited by Tvjmax | ICpulse | 60 A | ||||
| Gate-emitter voltage | VGE | 20 V | ||||
| Transient gate-emitter voltage | VGE | tp 10 s, D < 0.01 | 30 V | |||
| Power dissipation | Ptot | Tc = 25 C | 140 W | |||
| Tc = 100 C | 70 W | |||||
| Collector-emitter breakdown voltage | VBRCES | IC = 0.2 mA, VGE=0 V | 650 V | |||
| Collector-emitter saturation voltage | VCEsat | IC = 20 A, VGE = 15 V | 1.35 | 1.7 V | ||
| Tvj = 175 C | 1.6 | |||||
| Gate-emitter threshold voltage | VGEth | IC = 0.2 mA, VCE = VGE | 3.2 | 4 | 4.8 V | |
| Zero gate-voltage collector current | ICES | VCE = 650 V, VGE=0 V | 40 A | |||
| Tvj = 175 C | 0.5 mA | |||||
| Gate-emitter leakage current | IGES | VCE=0 V, VGE = 20 V | 100 nA | |||
| Transconductance | gfs | IC = 20 A, VCE = 20 V | 50 S | |||
| Input capacitance | Cies | VCE = 25 V, VGE=0 V, f = 100 kHz | 2130 pF | |||
| Output capacitance | Coes | VCE = 25 V, VGE=0 V, f = 100 kHz | 22 pF | |||
| Reverse transfer capacitance | Cres | VCE = 25 V, VGE=0 V, f = 100 kHz | 9 pF | |||
| Gate charge | QG | IC = 20 A, VGE = 15 V, VCC = 520 V | 89 nC | |||
| Turn-on delay time | td(on) | VCC = 400 V, VGE = 0/15 V, RG(on) = 24 , RG(off) = 24 , L = 30 nH, C = 11 pF, IC = 20 A | 25 | ns | ||
| Tvj = 175 C, IC = 20 A | 22 | ns | ||||
| Rise time (inductive load) | tr | VCC = 400 V, VGE = 0/15 V, RG(on) = 24 , RG(off) = 24 , L = 30 nH, C = 11 pF, IC = 20 A | 13 | ns | ||
| Tvj = 175 C, IC = 20 A | 15 | ns | ||||
| Turn-off delay time | td(off) | VCC = 400 V, VGE = 0/15 V, RG(on) = 24 , RG(off) = 24 , L = 30 nH, C = 11 pF, IC = 20 A | 255 | ns | ||
| Tvj = 175 C, IC = 20 A | 290 | ns | ||||
| Fall time (inductive load) | tf | VCC = 400 V, VGE = 0/15 V, RG(on) = 24 , RG(off) = 24 , L = 30 nH, C = 11 pF, IC = 20 A | 17 | ns | ||
| Tvj = 175 C, IC = 20 A | 17 | ns | ||||
| Turn-on energy | Eon | VCC = 400 V, VGE = 0/15 V, RG(on) = 24 , RG(off) = 24 , L = 30 nH, C = 11 pF, IC = 20 A | 0.5 | mJ | ||
| Tvj = 175 C, IC = 20 A | 0.62 | mJ | ||||
| Turn-off energy | Eoff | VCC = 400 V, VGE = 0/15 V, RG(on) = 24 , RG(off) = 24 , L = 30 nH, C = 11 pF, IC = 20 A | 0.2 | mJ | ||
| Tvj = 175 C, IC = 20 A | 0.35 | mJ | ||||
| Total switching energy | Ets | VCC = 400 V, VGE = 0/15 V, RG(on) = 24 , RG(off) = 24 , L = 30 nH, C = 11 pF, IC = 20 A | 0.7 | mJ | ||
| Tvj = 175 C, IC = 20 A | 0.97 | mJ | ||||
| Operating junction temperature | Tvj | -40 to 175 C | ||||
| Diode | ||||||
| Repetitive peak reverse voltage | VRRM | Tvj 25 C | 650 V | |||
| Diode forward current, limited by Tvjmax | IF | Tc = 25 C | 17 A | |||
| Tc = 100 C | 10 A | |||||
| Diode pulsed current, tp limited by Tvjmax | IFpulse | 30 A | ||||
| Diode forward voltage | VF | IF = 8.5 A | 1.3 | 1.6 V | ||
| Tvj = 175 C | 1.35 | |||||
| Diode reverse recovery time | trr | VR = 400 V, IF = 10 A, -diF/dt = 1340 A/s | 89 | ns | ||
| Tvj = 175 C, IF = 10 A, -diF/dt = 1300 A/s | 92 | ns | ||||
| Diode reverse recovery charge | Qrr | VR = 400 V, IF = 10 A, -diF/dt = 1340 A/s | 1 | C | ||
| Tvj = 175 C, IF = 10 A, -diF/dt = 1300 A/s | 1.7 | C | ||||
| Diode peak reverse recovery current | Irrm | VR = 400 V, IF = 10 A, -diF/dt = 1340 A/s | 23 | A | ||
| Tvj = 175 C, IF = 10 A, -diF/dt = 1300 A/s | 29.1 | A | ||||
| Diode peak rate of fall of reverse recovery current | dirr/dt | VR = 400 V, IF = 10 A, -diF/dt = 1340 A/s | 3330 | A/s | ||
| Tvj = 175 C, IF = 10 A, -diF/dt = 1300 A/s | 775 | A/s | ||||
| Operating junction temperature | Tvj | -40 to 175 C | ||||
2410121609_Infineon-IKWH20N65WR6_C5359099.pdf
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