Silicon Carbide N-Channel MOSFET HXY MOSFET DIW065SIC015-HXY with low On-Resistance and high voltage capability
Key Attributes
Model Number:
DIW065SIC015-HXY
Product Custom Attributes
Mfr. Part #:
DIW065SIC015-HXY
Package:
TO-247
Product Description
SiC Power MOSFET N-Channel Enhancement Mode
The HUAXUANYANG HXY SiC Power MOSFET is an N-Channel Enhancement Mode device designed for high-performance applications. Leveraging Wide bandgap SiC MOSFET technology, it offers low On-Resistance with high blocking voltage, low capacitances for high-speed switching, and low reverse recovery charge (Qrr). This results in reduced switching losses, increased system switching frequency, higher power density, and reduced heat sink requirements. It is suitable for applications such as switch mode power supplies, renewable energy systems, on-board chargers, and high voltage DC/DC converters.
Product Attributes
- Brand: HUAXUANYANG
- Manufacturer: HXY ELECTRONICS CO.,LTD
- Website: www.hxymos.com
- Model: DIW065SIC015
- Package: TO-247
- Technology: SiC (Silicon Carbide)
- Channel Type: N-Channel Enhancement Mode
- Certifications: Halogen free, RoHS compliant
Technical Specifications
| Part Number | Parameter | Test Conditions | Value | Unit | Notes |
|---|---|---|---|---|---|
| DIW065SIC015 | Drain-Source Voltage (VDSmax) | VGS = 0V, ID = 100A | 750 | V | |
| Gate-Source Voltage (VGS) | -10/+25 | V | |||
| Recommended Gate-Source Voltage (VGSop) | Static | -4/+18 | V | ||
| Continuous Drain Current (ID) | VGS = 18V, TC = 25C | 218 | A | Fig. 14 | |
| Continuous Drain Current (ID) | VGS = 18V, TC = 100C | 154 | A | ||
| Pulsed Drain Current (ID,pulse) | VGS = 18V, pulse width tp limited by Tjmax | 485 | A | AC (f > 1 Hz) | |
| Power Dissipation (PD) | TC = 25C, Tj = 175C | 714 | W | Fig.16 | |
| Operating Junction Temperature (Tj) | -55~175 | C | |||
| Storage Temperature (Tstg) | -55~175 | C | |||
| Drain-Source Breakdown Voltage (V(BR)DSS) | VGS = 0V, ID = 100A | 650 | V | ||
| Gate Threshold Voltage (VGS(th)) | VGS = VDS, ID =36mA | 2.7 | V | Fig. 9 | |
| DIW065SIC015 | Gate-Source Leakage Current (IGSS) | VGS = 18V, VDS = 0V | 250 | nA | |
| Drain Current Zero Gate Voltage (IDSS) | VDS =750V, VGS = 0V, Tj = 25C | 1 | 50 | A | |
| Drain-Source On-state Resistance (RDS(on)) | VGS = 18V, ID =80A | 11 | m | Fig. 3, 4 , 5 | |
| Drain-Source On-state Resistance (RDS(on)) | VGS = 18V, ID =80A,Tj = 175C | 15 | m | ||
| Transconductance (gfs) | VDS = 18V, ID =80A | 83 | S | Fig. 6 | |
| Transconductance (gfs) | VDS = 18V, ID =80A,Tj = 175C | 66 | S | ||
| Thermal resistance from Junction to Case (Rth(jc)) | 0.21 | K/W | Fig. 15 | ||
| DIW065SIC015 | Gate to Source Charge (QGS) | VDS = 400V, ID =80A, VGS = -4V/18V | 125 | nC | Fig. 10 |
| Gate to Drain Charge (QGD) | 52 | nC | |||
| Total Gate Charge (QG) | 268 | nC | |||
| Input Capacitance (Ciss) | VGS = 0V, VDS = 600V, f =1 MHz, VAC = 25mV | 6220 | pF | Fig. 13 | |
| Output Capacitance (Coss) | 482 | pF | |||
| Reverse Transfer Capacitance (Crss) | 37 | pF | |||
| Internal Gate Resistance (RG(int)) | f=1 MHz, VAC = 25mV | 1 | |||
| DIW065SIC015 | Turn-On Delay Time (td(on)) | VDS = 400V, VGS = -4/+18V, ID=80 A, RG(iext) = 5 , L = 100H | 5 | nS | Fig.20 |
| Rise Time (tr) | 62 | nS | |||
| Turn-Off Delay Time (td(off)) | 38 | nS | |||
| Fall Time (tf) | 11 | nS | |||
| Turn-On Energy (Eon) | 869 | J | Fig.19 | ||
| Turn-Off Energy (Eoff) | 467 | J | |||
| Total switching energy (Etot) | 1336 | J | |||
| Diode Forward Voltage (VSD) | VGS = -4V, ISD = 40A | 3.8 | V | Fig. 7,8 | |
| DIW065SIC015 | Diode Forward Voltage (VSD) | VGS = -4V, ISD = 40A, Tj = 175C | 3.4 | V | |
| Continuous Diode Forward Current (IS) | VGS = -4V, TC = 25C | 142 | A | ||
| Diode pulse Current (IS, pulse) | VGS = -4V, pulse width tp limited by Tjmax | 485 | A | ||
| Reverse Recovery Charge (Qrr) | VGS = -4V, ISD = 80A, VR = 400V, dif/dt = 3000A/us | 555 | nC |
2512091725_HXY-MOSFET-DIW065SIC015-HXY_C53133732.pdf
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