High Voltage N Channel MOSFET Huixin H12N65IK with Low On Resistance and ROHS Compliant Construction
Key Attributes
Model Number:
H12N65IK
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
12.3A
RDS(on):
278mΩ@10V
Operating Temperature -:
-55℃~+150℃
Reverse Transfer Capacitance (Crss@Vds):
1.8pF
Number:
1 N-channel
Input Capacitance(Ciss):
870pF
Pd - Power Dissipation:
106W
Output Capacitance(Coss):
54pF
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
H12N65IK
Package:
TO-220AB
Product Description
Product Overview
This N-Channel Power MOSFET features new technology for high voltage devices, offering low on-resistance and low conduction losses in a small package. Its ultra-low gate charge reduces driving requirements. The device is 100% avalanche tested and ROHS compliant.
Product Attributes
- Case: Molded plastic body
- Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
- Polarity: As marked
- Mounting Position: Any
- Certifications: ROHS compliant, UL 6 (implied by TO-220AB marking)
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 650 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 2.0 | 4.0 | V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=7.5A | 278 | 320 | m | |
| Continuous Drain Current (DC) at Tc=25C | ID (DC) | 12.3 | A | |||
| Continuous Drain Current (DC) at Tc=100C | ID (DC) | 7.8 | A | |||
| Pulsed drain current | IDM (pluse) | 37 | A | |||
| Maximum Power Dissipation (Tc=25) | PD | 106 | W | |||
| Single pulse avalanche energy (Note 2) | EAS | 165 | mJ | |||
| Avalanche current (Note 1) | IAR | 1.95 | A | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | C | ||
| Thermal Resistance, Junction-to-Case | RthJC | 1.20 | C /W | |||
| Thermal Resistance, Junction-to-Ambient | RthJA | 62.5 | C /W | |||
| Zero Gate Voltage Drain Current (Tc=25) | IDSS | VDS=650V,VGS=0V | 1 | A | ||
| Zero Gate Voltage Drain Current (Tc=125) | IDSS | VDS=650V,VGS=0V | 100 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=30V,VDS=0V | 100 | nA | ||
| Input Capacitance | Clss | VDS=50V,VGS=0V, F=1.0MHz | 870 | pF | ||
| Output Capacitance | Coss | 54 | pF | |||
| Reverse Transfer Capacitance | Crss | 1.8 | pF | |||
| Total Gate Charge | Qg | VDS=480V,ID=11.5A, VGS=10V | 19 | nC | ||
| Gate-Source Charge | Qgs | 6 | nC | |||
| Gate-Drain Charge | Qg d | 6.5 | nC | |||
| Turn-on Delay Time | td(on) | VDD=380V,ID=5.5A, RG=3,VGS=10V | 11 | nS | ||
| Turn-on Rise Time | tr | 8 | nS | |||
| Turn-Off Delay Time | td(off) | 58 | 70 | nS | ||
| Turn-Off Fall Time | tf | 9 | 14 | nS | ||
| Source-drain current (Body Diode) | ISD | TC=25C | 11.5 | A | ||
| Pulsed Source-drain current (Body Diode) | ISDM | 46 | A | |||
| Forward on voltage | VSD | Tj=25C,ISD=11.5A,VGS=0V | 0.9 | 1.2 | V | |
| Reverse Recovery Time | trr | Tj=25C,IF=5.8A, di/dt=100A/s | 220 | nS | ||
| Reverse Recovery Charge | Qrr | 2.2 | uC | |||
| Peak Reverse Recovery Current | Irrm | 19 | A |
2508041620_Huixin-H12N65IK_C49823481.pdf
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